Abstract:This paper reports an advanced deep reactive ion etching (DRIE) process for realizing ultra-deep (>500-<inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula>) and ultra-high aspect-ratio (UHAR) silicon structures (AR > 40 for 1-mm through-trench etch, <inline-formula> <tex-math notation="LaTeX">$\text {AR}\approx 80$ </tex-math></inline-formula> for 500-<inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> through-trench etch, and AR > 20 for 500-<inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> through-hole etch), with straight sidewalls across a wide range of feature sizes. The challenges of making such structures are overcome by continuously ramping critical parameters of the Bosch DRIE process throughout the process, including the 380-kHz bias power during etch step, the etch/passivation step duration, and the chamber pressure. The masking material capable of enduring the long DRIE process is also discussed; 10-<inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> and 25-<inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> wide trenches are etched to a depth of >750-<inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> and >1000-<inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula>, respectively, in 1-mm-thick silicon wafers with straight sidewall profiles and flat trench bottoms. Deeper trenches are expected to be etched beyond a 1-mm thick wafer with thicker and/or higher selectivity masking materials. We have also demonstrated etching of circular holes of diameters as small as 25-<inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> to a depth of >500-<inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula>, and potentially with 10–15 <inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> diameter holes. This advanced DRIE process offers opportunities for applications ranging from through-silicon via in 3-D CMOS integration to emerging micro- and meso-scale microelectromechanical system applications that demand ultra-deep and UHAR DRIE. [2017–0298]

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