The Simulation Research of DRIE Process

ZHU Fu-yun,YU Min,JIN Yu-feng,ZHANG Hai-xia
DOI: https://doi.org/10.3969/j.issn.1673-5692.2011.01.007
2011-01-01
Abstract:Along with the development of modern science and technology,people expect more of the miniaturization,high performance,multi-function,low power consumption and low cost of microsystem.The 3D SiP(Three Dimensional System in Packaging) based on TSV(Through Silicon Via) technology is becoming more and more important.TSV can greatly promote chip performance and increase chip functions in smaller area by means of the vertical stack of integrated circuit.To help technology researchers to carry out TSV experiment,we performed the simulation work on DRIE,which is the key process of TSV technology.In this paper we explain the models we adopted and the simulation results will be compared with the experiment research.
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