Abstract:TSV (Through silicon via) is the new generation of packaging technology in integrated circuits industry. DRIE (deep reactive ion etching) process is the critical technology for TSV manufacturing. The simulation on DRIE has been researched a lot for process development. However it is still difficult to involve the equipment parameters directly in the simulation which is an obstacle to the application of simulation. In this paper, we try to develop a practical simulation method to involve the critical parameters of DRIE process such as coil power. The DRIE simulation is based on the two-dimensional topography evolution method that we have developed. The alternation etching of polymer and silicon in the Bosch process is modeled. Physical models for etching and deposition are included. A string-cell hybrid method based on string structure and cell structure is used. In order to connect the DRIE equipment parameters with the model parameters, the isotropic and ion etching rate of both silicon and polymer are considered respectively. The effects of coil power are described analytically and empirically. The extraction of the parameters of the function is performed by fitting the functions to experimental data. The functions are incorporated into the DRIE simulator. The functions can realize robust numerical simulation. The application of the simulator for the DRIE process development is demonstrated. The simulation results are verified by the experimental results.

Improvement of Drie Simulation Method for Process Development Application

The Simulation Research of DRIE Process

3D Simulation of Profile Evolution in Silicon DRIE

Three-Dimensional Simulation of DRIE Process Based on the Narrow Band Level Set and Monte Carlo Method

High-Frequency Electrothermal Characterization of TSV-Based Power Delivery Network

Simulation of profile evolution in etching-polymerization alternation in DRIE of silicon with SF/sub 6//C/sub 4/F/sub 8/

Simulation of profile evolution in etching-polymerization alternation in drie of silicon with SF6/C4F8

Modeling and Simulation of Silicon Dry Etching

A Stabilized Numerical Scheme to Simulate Synergistic Effect of TID and TDR in Semiconductor Devices

An Improved Algorithm for Drift Diffusion Transport and Its Application on Large Scale Parallel Simulation of Resistive Random Access Memory Arrays

Parallel Modeling Fully Coupled Multiphysics Process in Resistive Random Access Memory Array

Modeling and simulation of the lag effect in a deep reactive ion etching process

Parametric Study of DRIE Process for Enhancing the Profile-Preserving Property of Square Through Silicon Via

Fabrication of 3D Packaging TSV using DRIE

Flux based modeling and simulation of dry etching for fabrication of silicon deep trench structures

Research on deep RIE-based through-si-via micromachining for 3-D system-in-package integration

Development of TSV simulator: FASTsv.

Electrical-Thermal Co-Simulation For Through Silicon Via And Active Tier In 3-D Ic

Parametric Study, Modeling of Etching Process and Application for Tapered Through-Silicon-via

Simulation of TSV Protrusion in 3DIC Integration by Directly Loading on Coarse-Grained Phase-Field Crystal Model

Simulation of the Bosch Process with a String–cell Hybrid Method