Abstract:TSV (Through silicon via) is the new generation of packaging technology in integrated circuits industry. DRIE (deep reactive ion etching) process is the critical technology for TSV manufacturing. The simulation on DRIE has been researched a lot for process development. However it is still difficult to involve the equipment parameters directly in the simulation which is an obstacle to the application of simulation. In this paper, we try to develop a practical simulation method to involve the critical parameters of DRIE process such as coil power. The DRIE simulation is based on the two-dimensional topography evolution method that we have developed. The alternation etching of polymer and silicon in the Bosch process is modeled. Physical models for etching and deposition are included. A string-cell hybrid method based on string structure and cell structure is used. In order to connect the DRIE equipment parameters with the model parameters, the isotropic and ion etching rate of both silicon and polymer are considered respectively. The effects of coil power are described analytically and empirically. The extraction of the parameters of the function is performed by fitting the functions to experimental data. The functions are incorporated into the DRIE simulator. The functions can realize robust numerical simulation. The application of the simulator for the DRIE process development is demonstrated. The simulation results are verified by the experimental results.

Simulation of profile evolution in etching-polymerization alternation in DRIE of silicon with SF/sub 6//C/sub 4/F/sub 8/

Simulation of profile evolution in etching-polymerization alternation in drie of silicon with SF6/C4F8

3D Simulation of Profile Evolution in Silicon DRIE

Modeling and Simulation of Silicon Dry Etching

Three-Dimensional Simulation of DRIE Process Based on the Narrow Band Level Set and Monte Carlo Method

Improvement of Drie Simulation Method for Process Development Application

Flux based modeling and simulation of dry etching for fabrication of silicon deep trench structures

Simulation of the Bosch Process with a String–cell Hybrid Method

Simulation of three-dimensional etch profile of silicon during orientation dependent anisotropic etching

Profile simulation model for sub-50 nm cryogenic etching of silicon using SF6/O2 inductively coupled plasma

A Three-Step Model of Black Silicon Formation in Deep Reactive Ion Etching Process

A 3-D Simulator for Silicon Anisotropic Wet Chemical Etching Process Based on Cellular Automata

Simulation of Anisotropic Etching of Silicon using a Cellular Automata Model

Simulation of two-dimensional etch profile of silicon during orientation-dependent anisotropic etching

Novel method for determining the etch rate distributions of Si

REACTION SIMULATION AND EXPERIMENT OF A Cl2/Ar INDUCTIVELY COUPLED PLASMA FOR ETCHING OF SILICON

Study of high aspect ratio etching in silicon by a mixture of SF6/O2 using a 2-D model based on a Monte Carlo approach.

A cellular automaton-based simulator for silicon anisotropic etching processes considering high index planes

Monte Carlo Simulation of Defects of a Trench Profile in the Process of Deep Reactive Ion Etching of Silicon

Simulation of Anisotropic Chemical Etching of Single Crystalline Silicon using Cellular-Automata

Monte Carlo simulation and measurement of silicon reactive ion etching profiles