Abstract:An evolutionary algorithm is presented for the automated calibration of the continuous cellular automaton for the simulation of isotropic and anisotropic wet chemical etching of silicon in as many as 31 widely different and technologically relevant etchants, including KOH, KOH+IPA, TMAH and TMAH+Triton, in various concentrations and temperatures. Based on state-of-the-art evolutionary operators, we implement a robust algorithm for the simultaneous optimization of roughly 150 microscopic removal rates based on the minimization of a cost function with four quantitative error measures, including (i) the error between simulated and experimental macroscopic etch rates for numerous surface orientations all over the unit sphere, (ii) the error due to underetching asymmetries and floor corrugation features observed in simulated silicon samples masked using a circular pattern, (iii) the error associated with departures from a step-flow-based hierarchy in the values of the microscopic removal rates, and (iv) the error associated with deviations from a step-flow-based clustering of the microscopic removal rates. For the first time, we present the calibration and successful simulation of two technologically relevant CMOS compatible etchants, namely TMAH and, especially, TMAH+Triton, providing several comparisons between simulated and experimental MEMS structures based on multi-step etching in these etchants.

Simulation of Anisotropic Etching of Silicon using a Cellular Automata Model

Simulation of anisotropic chemical etching of crystalline silicon using a cellular automata model

Simulation of Anisotropic Chemical Etching of Single Crystalline Silicon using Cellular-Automata

A 3-D Simulator for Silicon Anisotropic Wet Chemical Etching Process Based on Cellular Automata

Simulating anisotropic etching of silicon in any etchant: evolutionary algorithm for the calibration of the continuous cellular automaton

A cellular automaton-based simulator for silicon anisotropic etching processes considering high index planes

Level Set Approach to Anisotropic Wet Etching of Silicon

Orientation-dependent surface morphology of crystalline silicon during anisotropic etching using a continuous cellular automaton

Modeling and Simulation of Silicon Dry Etching

Step flow model in continuous cellular automata method for simulation of anisotropic etching of silicon

Anisotropic Crystalline Etching Simulation Using a Continuous Cellular Automata Algorithm

Micromachining process simulation using a continuous cellular automata method

Simulation of two-dimensional etch profile of silicon during orientation-dependent anisotropic etching

Evolutionary continuous cellular automaton for the simulation of wet etching of quartz

Simulation of the Void Shape Evolution of High-Temperature Annealed Silicon Structures by means of a Custom Level-Set Formulation

Level set implementation for the simulation of anisotropic etching: application to complex MEMS micromachining

Convex corner undercutting of {100} silicon in anisotropic KOH etching: the new step-flow model of 3-D structuring and first simulation results

Simulation of three-dimensional etch profile of silicon during orientation dependent anisotropic etching

Simulation of profile evolution in etching-polymerization alternation in drie of silicon with SF6/C4F8

Faster and exact implementation of the continuous cellular automaton for anisotropic etching simulations

Simulation of profile evolution in etching-polymerization alternation in DRIE of silicon with SF/sub 6//C/sub 4/F/sub 8/