Abstract:A new model for the anisotropic etching of Si predicts a maximum dissolution rate at 22 wt. % KOH:H2 O and a zero etch rate at the solubility limit of KOH in H2 O, which is in good agreement with experiments on {100} and {110} Si. However, the {111} etch rate may decrease continuously with OH− concentration (no peak) and appears to be blocked by OH:3H2 O or some other threefold complexes that attach themselves to every bond on this surface. The strong effects of organics on the etching of convex corners, groove bottoms, and the relative etch rates on the three major orientations are noted, as are the possible effects of Fe and other impurities on the etching velocity and geometry of misorientation steps. The ability to pass current preferentially down the face of these steps needs to be developed before several unique functions can be tested. These include the fabrication of atomic wires, chiral molecule filters, and a sort of flying carpet type of air foil; the functions of which are based on clockwise facing steps on all four walls of holes in single crystal wafers. Vertical thin studs containing controlled pore diameters ranging from 1 to 1000 nm can be formed easily into semipermeable membranes and other complex structures. These interdigitated three dimensional structures can be applied to desalinization, fuel cells, biological membrane and neuron simulation, chemical and nuclear reaction schemes, and much more. The fabrication of micromirrors and lenses is also discussed.

Simulation of two-dimensional etch profile of silicon during orientation-dependent anisotropic etching

Simulation of three-dimensional etch profile of silicon during orientation dependent anisotropic etching

Anisotropic-etching process simulation system MICROCAD analyzing complete 3D etching profiles of single crystal silicon

Development of an orientation-dependent anisotropic etching simulation system MICROCAD

Simulation of Anisotropic Etching of Silicon using a Cellular Automata Model

Isotropic Etch for SiO2 Microcantilever Release with ICP System

Simulation of Anisotropic Chemical Etching of Single Crystalline Silicon using Cellular-Automata

Simulating anisotropic etching of silicon in any etchant: evolutionary algorithm for the calibration of the continuous cellular automaton

Simulation of anisotropic chemical etching of crystalline silicon using a cellular automata model

Level Set Approach to Anisotropic Wet Etching of Silicon

Simulation of profile evolution in etching-polymerization alternation in drie of silicon with SF6/C4F8

Orientation-dependent surface morphology of crystalline silicon during anisotropic etching using a continuous cellular automaton

A new theory for the anisotropic etching of silicon and some underdeveloped chemical micromachining concepts

Simulation of profile evolution in etching-polymerization alternation in DRIE of silicon with SF/sub 6//C/sub 4/F/sub 8/

Anisotropic Etching of Three-Dimensional Shapes in Silicon - the Important Role of Galvanic Interaction

Simulation of the Void Shape Evolution of High-Temperature Annealed Silicon Structures by means of a Custom Level-Set Formulation

Monte Carlo simulation and measurement of silicon reactive ion etching profiles

3D Simulation of Profile Evolution in Silicon DRIE

A 3-D Simulator for Silicon Anisotropic Wet Chemical Etching Process Based on Cellular Automata

A cellular automaton-based simulator for silicon anisotropic etching processes considering high index planes

A two-dimensional computer simulation for dry etching using Monte Carlo techniques