Abstract:A new model for the anisotropic etching of Si predicts a maximum dissolution rate at 22 wt. % KOH:H2 O and a zero etch rate at the solubility limit of KOH in H2 O, which is in good agreement with experiments on {100} and {110} Si. However, the {111} etch rate may decrease continuously with OH− concentration (no peak) and appears to be blocked by OH:3H2 O or some other threefold complexes that attach themselves to every bond on this surface. The strong effects of organics on the etching of convex corners, groove bottoms, and the relative etch rates on the three major orientations are noted, as are the possible effects of Fe and other impurities on the etching velocity and geometry of misorientation steps. The ability to pass current preferentially down the face of these steps needs to be developed before several unique functions can be tested. These include the fabrication of atomic wires, chiral molecule filters, and a sort of flying carpet type of air foil; the functions of which are based on clockwise facing steps on all four walls of holes in single crystal wafers. Vertical thin studs containing controlled pore diameters ranging from 1 to 1000 nm can be formed easily into semipermeable membranes and other complex structures. These interdigitated three dimensional structures can be applied to desalinization, fuel cells, biological membrane and neuron simulation, chemical and nuclear reaction schemes, and much more. The fabrication of micromirrors and lenses is also discussed.

Simulation of anisotropic chemical etching of crystalline silicon using a cellular automata model

Simulation of Anisotropic Etching of Silicon using a Cellular Automata Model

Simulation of Anisotropic Chemical Etching of Single Crystalline Silicon using Cellular-Automata

Simulating anisotropic etching of silicon in any etchant: evolutionary algorithm for the calibration of the continuous cellular automaton

A 3-D Simulator for Silicon Anisotropic Wet Chemical Etching Process Based on Cellular Automata

Orientation-dependent surface morphology of crystalline silicon during anisotropic etching using a continuous cellular automaton

Step flow model in continuous cellular automata method for simulation of anisotropic etching of silicon

Anisotropic Crystalline Etching Simulation Using a Continuous Cellular Automata Algorithm

A cellular automaton-based simulator for silicon anisotropic etching processes considering high index planes

Evolutionary continuous cellular automaton for the simulation of wet etching of quartz

Faster and exact implementation of the continuous cellular automaton for anisotropic etching simulations

Micromachining process simulation using a continuous cellular automata method

Evidence for faster etching at the mask-substrate interface: atomistic simulation of complex cavities at the micron-/submicron-scale by the continuous cellular automaton

Modeling and Simulation of Silicon Dry Etching

Convex corner undercutting of {100} silicon in anisotropic KOH etching: the new step-flow model of 3-D structuring and first simulation results

Level Set Approach to Anisotropic Wet Etching of Silicon

Simulation of two-dimensional etch profile of silicon during orientation-dependent anisotropic etching

Anisotropic Etching of Three-Dimensional Shapes in Silicon - the Important Role of Galvanic Interaction

Level set implementation for the simulation of anisotropic etching: application to complex MEMS micromachining

Atomistic description of Si etching with HCl

A new theory for the anisotropic etching of silicon and some underdeveloped chemical micromachining concepts