Abstract:The use of atomistic methods, such as the Continuous Cellular Automaton (CCA), is currently regarded as a computationally efficient and experimentally accurate approach for the simulation of anisotropic etching of various substrates in the manufacture of Micro-electro-mechanical Systems (MEMS). However, when the features of the chemical process are modified, a time-consuming calibration process needs to be used to transform the new macroscopic etch rates into a corresponding set of atomistic rates. Furthermore, changing the substrate requires a labor-intensive effort to reclassify most atomistic neighborhoods. In this context, the Level Set (LS) method provides an alternative approach where the macroscopic forces affecting the front evolution are directly applied at the discrete level, thus avoiding the need for reclassification and/or calibration. Correspondingly, we present a fully-operational Sparse Field Method (SFM) implementation of the LS approach, discussing in detail the algorithm and providing a thorough characterization of the computational cost and simulation accuracy, including a comparison to the performance by the most recent CCA model. We conclude that the SFM implementation achieves similar accuracy as the CCA method with less fluctuations in the etch front and requiring roughly 4 times less memory. Although SFM can be up to 2 times slower than CCA for the simulation of anisotropic etchants, it can also be up to 10 times faster than CCA for isotropic etchants. In addition, we present a parallel, GPU-based implementation (gSFM) and compare it to an optimized, multicore CPU version (cSFM), demonstrating that the SFM algorithm can be successfully parallelized and the simulation times consequently reduced, while keeping the accuracy of the simulations. Although modern multicore CPUs provide an acceptable option, the massively parallel architecture of modern GPUs is more suitable, as reflected by computational times for gSFM up to 7.4 times faster than for cSFM.

Evidence for faster etching at the mask-substrate interface: atomistic simulation of complex cavities at the micron-/submicron-scale by the continuous cellular automaton

Orientation-dependent surface morphology of crystalline silicon during anisotropic etching using a continuous cellular automaton

Graphene Masks As Passivation Layers in the Electrochemical Etching of Silicon

Step flow model in continuous cellular automata method for simulation of anisotropic etching of silicon

Simulation of anisotropic chemical etching of crystalline silicon using a cellular automata model

Simulation of Anisotropic Chemical Etching of Single Crystalline Silicon using Cellular-Automata

Level set implementation for the simulation of anisotropic etching: application to complex MEMS micromachining

Micromachining process simulation using a continuous cellular automata method

Faster and exact implementation of the continuous cellular automaton for anisotropic etching simulations

A 3-D Simulator for Silicon Anisotropic Wet Chemical Etching Process Based on Cellular Automata

Implementation and evaluation of the Level Set method: Towards efficient and accurate simulation of wet etching for microengineering applications

Molecular dynamics simulation of Si trench etching with SiO2 hard masks

Evolutionary continuous cellular automaton for the simulation of wet etching of quartz

Anisotropic Crystalline Etching Simulation Using a Continuous Cellular Automata Algorithm

A new theory for the anisotropic etching of silicon and some underdeveloped chemical micromachining concepts

Simulation of Anisotropic Etching of Silicon using a Cellular Automata Model

Etching Mechanisms of CF3Etching Fluorinated Si: Molecular Dynamics Simulation

Anisotropic Etching of Three-Dimensional Shapes in Silicon - the Important Role of Galvanic Interaction

Maskless Etching Of Three-Dimensional Silicon Structures In Koh

Profile simulation model for sub-50 nm cryogenic etching of silicon using SF6/O2 inductively coupled plasma

Study on maskless etching of silicon symmetric beam-mass structure in aqueous KOH