Abstract:The present status and recent research results on amorphous oxide semiconductors (AOSs) and their thin-film transistors (TFTs) are reviewed. AOSs represented by amorphous In-Ga-Zn-O (a-IGZO) are expected to be the channel material of TFTs in next-generation flat-panel displays because a-IGZO TFTs satisfy almost all the requirements for organic light-emitting-diode displays, large and fast liquid crystal and three-dimensional (3D) displays, which cannot be satisfied using conventional silicon and organic TFTs. The major insights of this review are summarized as follows. (i) Most device issues, such as uniformity, long-term stability against bias stress and TFT performance, are solved for a-IGZO TFTs. (ii) A sixth-generation (6G) process is demonstrated for 32″ and 37″ displays. (iii) An 8G sputtering apparatus and a sputtering target have been developed. (iv) The important effect of deep subgap states on illumination instability is revealed. (v) Illumination instability under negative bias has been intensively studied, and some mechanisms are proposed. (vi) Degradation mechanisms are classified into back-channel effects, the creation of traps at an interface and in the gate insulator, and the creation of donor states in annealed a-IGZO TFTs by the Joule heating; the creation of bulk defects should also be considered in the case of unannealed a-IGZO TFTs. (vii) Dense passivation layers improve the stability and photoresponse and are necessary for practical applications. (viii) Sufficient knowledge of electronic structures and electron transport in a-IGZO has been accumulated to construct device simulation models.

Extraction of Density-of-states in Amorphous InGaZnO Thin-Film Transistors from Temperature Stress Studies

Mobility and Stability Enhancement of Amorphous In-Ga-Zn-O TFTs with Atomic Layer Deposited Al2O3/SiO2Stacked Insulators

Drain Current Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors with Different Active Layer Thicknesses

Thermal stability of amorphous InGaZnO thin film transistors passivated by AlO x layers

Thermal Stability of Amorphous InGaZnO Thin Film Transistors with Different Oxygen-Contained Active Layers

Stablity research and application of amorphous indium gallium zinc oxide tfts for active matrix organic light-emitting diode display

Enhanced Bias Stress Stability of A-Ingazno Thin Film Transistors by Inserting an Ultra-Thin Interfacial InGaZnO:N Layer

Stability of Amorphous Inalzno Thin-Film Transistors

Performance and Stability of Amorphous Ingazno Thin Film Transistors with A Designed Device Structure

Stability of Low Temperature and Transparent Amorphous Ingazno Thin Film Transistor under Illumination

Thermal Annealing Improved Stability of Amorphous InGaZnO Thin-Film Transistors Under AC Bias Stresses

Influence of Channel Layer and Passivation Layer on the Stability of Amorphous InGaZnO Thin Film Transistors.

High-Performance Amorphous InGaZnO Thin-Film Transistor Gated by HfAlOₓ Dielectric with Ultralow Subthreshold Swing

Development and Analysis of Nitrogen-Doped Amorphous InGaZnO Thin Film Transistors

Effect Of Active Layer Deposition Temperature On The Performance Of Sputtered Amorphous In-Ga-Zn-O Thin Film Transistors

High-Performance A-Ingazno Thin-Film Transistors with Extremely Low Thermal Budget by Using a Hydrogen-Rich Al2O3 Dielectric

Reduction of internal stress in InGaZnO (IGZO) thin film transistors by ultra-thin metal oxide layer

Densification of a-IGZO with low-temperature annealing for flexible electronics applications

High-Performance Unannealed A-Ingazno Tft with an Atomic-Layer-Deposited Sio2 Insulator

Present status of amorphous In–Ga–Zn–O thin-film transistors

Nitrogen-doped Amorphous Oxide Semiconductor Thin Film Transistors with Double-Stacked Channel Layers