ChemInform Abstract: Fabrication and Properties of P‐type K Doped Zn1‐xMgxO Thin Film.

Z. Z. Ye,et al. et al.

DOI: https://doi.org/10.1002/chin.201132005

2011-01-01

ChemInform

Abstract:AbstractThe title films are prepared by pulsed laser deposition.

What problem does this paper attempt to address?

Fabrication and Properties of P-Type K Doped Zn1−Mg O Thin Film

L. Q. Zhang,Z. Z. Ye,J. Y. Huang,B. Lu,H. P. He,J. G. Lu,Y. Z. Zhang,J. Jiang,J. Zhang,K. W. Wu,W. G. Zhang

DOI: https://doi.org/10.1016/j.jallcom.2011.04.047

IF: 6.2

2011-01-01

Journal of Alloys and Compounds

Abstract:A series of K doped Zn1−xMgxO thin films have been prepared by pulsed laser deposition (PLD). Hall-effect measurements indicate that the films exhibit stable p-type behavior with duration of at least six months. The band gap of the K doped Zn1−xMgxO films undergoes a blueshift due to the Mg incorporation. However, photoluminescence (PL) results reveal that the crystallinity decreased with the increasing of Mg content. The fabricated K doped p-type Zn0.95Mg0.05O thin film exhibits good electrical properties, with resistivity of 15.21Ωcm and hole concentration of 5.54×1018cm−3. Furthermore, a simple ZnO-based p–n heterojunction was prepared by deposition of a K-doped p-type Zn0.95Mg0.05O layer on Ga-doped n-type ZnO thin film with low resistivity. The p–n diode heterostructure exhibits typical rectification behavior of p–n junctions.
Preparation and Properties of P-Type Ag-doped ZnMgO Thin Films by Pulsed Laser Deposition

Ling Cao,Liping Zhu,Jie Jiang,Yang Li,Yinzhu Zhang,Zhizhen Ye

DOI: https://doi.org/10.1016/j.jallcom.2011.12.013

IF: 6.2

2011-01-01

Journal of Alloys and Compounds

Abstract:We report on p-type Ag-doped ZnMgO thin films prepared on quartz substrates by pulsed laser deposition. The effects of substrate temperature on the structural, electrical and optical properties of the films are investigated in detail. All the films we obtained have a preferred orientation with the c-axis perpendicular to the substrates. Secondary ion mass spectroscopy and X-ray photoelectron spectroscopy measurements confirm that Ag has been incorporated into the films and principally occupies Zn site in the state of Ag+ ion and acts as an acceptor. An acceptable p-type conduction, with a resistivity of 24.96Ωcm, a Hall mobility of 0.32cm2V−1s−1, and a hole concentration of 7.89×1017cm−3 at room temperature, was obtained for the film grown at the optimal substrate temperature of 400°C. The formation of good p-type conduction in this film might be due to a combined effect of the increase of substitutional-Ag (AgZn) density and the suppression of the oxygen-related defects. The p-type conduction of Ag-doped ZnMgO film is further confirmed by a rectifying Ag-doped ZnMgO/i-ZnO/Al-doped ZnMgO heterojunction.
The Fabrication of Na Doped P -Type Zn 1− X Mg X O Films by Pulsed Laser Deposition

L. Q. Zhang,Y. Z. Zhang,Z. Z. Ye,S. S. Lin,B. Lu,H. P. He,L. X. Chen,J. G. Lu,J. Jiang,K. W. Wu,J. Y. Huang,L. P. Zhu

DOI: https://doi.org/10.1007/s00339-011-6547-1

2011-01-01

Abstract:P-type Zn1−x Mg x O (0≤x≤0.25) films are obtained through Na doping, as confirmed by repeated Hall-effect measurements and rectification behavior of p-Zn0.81Mg0.19O:Na/n-Zn0.8Mg0.2O:Al quasi-homojunctions. The absorption and photoluminescence spectra indicate the band gap shifts to higher energy in linearly proportional to Mg content. Critically, X-ray diffraction (XRD) patterns reveal that the strain induced by Na doping can be counteracted through an appropriate content of Mg alloying. Both XRD data and Hall-effect data imply that the solubility of Na acceptor should be enhanced by alloying with Mg. The X-ray photoelectron spectrum (XPS) result indicates the existence of Na. Microstructure structure of the film is confirmed by high-resolution transmission electron microscope.
Fabrication of P-Type ZnMgO Films Via Pulsed Laser Deposition Method by Using Li As Dopant Source

Xinhua Pan,Zhizhen Ye,Hesheng Li,Yujia Zeng,Xiuquan Gu,Liping Zhu,Binghui Zhao,Yong Che

DOI: https://doi.org/10.1016/j.apsusc.2007.01.003

IF: 6.7

2007-01-01

Applied Surface Science

Abstract:p-Type Zn0.9Mg0.1O thin films have been realized via monodoping of Li acceptor by using pulsed laser deposition. The Li-doped Zn0.9Mg0.1O thin films possessed a good crystallinity with a (0002) preferential orientation and a high transmittance in the visible region. Secondary ion mass spectroscopy revealed that Li has been successfully incorporated into the Zn0.9Mg0.1O films. The obtained films with the best electrical properties show a hole concentration in the order of 1017cm−3 and a room-temperature resistivity in the range of 58–72Ωcm.
Fabrication of P‐type Li‐Doped ZnO Films by RF Magnetron Sputtering

Kuo-Chuang Chiu,Yi-Wen Kao,Jau-Ho Jean

DOI: https://doi.org/10.1111/j.1551-2916.2010.03636.x

IF: 4.186

2010-01-01

Journal of the American Ceramic Society

Abstract:The p‐type Li‐doped ZnO films are successfully deposited on a glass substrate by RF magnetron sputtering at room temperature. The pure, crystalline sputtering target of LiXZn1−XO1−X/2 with X in the range of 0–0.003 is fabricated using the powder synthesized by the thermal decomposition of a metal–nitrate–tartrate gel complex at 400°–800°C. The complex is prepared by dissolving nitrates of zinc and lithium in an aqueous solution with nitric and tartaric acids. The resulting compacts, which can be densified at 1400°C, exhibit a decreasing trend of electrical resistivity with increasing Li content. For the composition with 0.2 mol% Li, the p‐type Li‐doped ZnO film has an electrical resistivity of 1.3 Ω·cm, Hall mobility of 0.77 cm2·(V·s)−1, carrier concentration of 6.67 × 1018 cm−3, and high optical transmittance in the visible region.
Fabrication of P-Type Li-Doped Zno Films by Pulsed Laser Deposition

Bin Xiao,Zhizhen Ye,Yinzhu Zhang,Yujia Zeng,Liping Zhu,Binghui Zhao

DOI: https://doi.org/10.1016/j.apsusc.2006.01.041

IF: 6.7

2006-01-01

Applied Surface Science

Abstract:p-Type ZnO thin films have been realized via doping Li as acceptor by using pulsed laser deposition. In our experiment, Li2CO3 was used as Li precursor, and the growth temperature was varied from 400 to 600°C in pure O2 ambient. The Li-doped ZnO film prepared at 450°C possessed the lowest resistivity of 34Ωcm with a Hall mobility of 0.134cm2V−1s−1 and hole concentration of 1.37×1018cm−3. X-ray diffraction (XRD) measurements showed that the Li-doped ZnO films grown at different substrate temperatures were of completely (002)-preferred orientation.
Preparation and Characterization of Mg-doped ZnO Thin Films by Sol–gel Method

Kai Huang,Zhen Tang,Li Zhang,Jiangyin Yu,Jianguo Lv,Xiansong Liu,Feng Liu

DOI: https://doi.org/10.1016/j.apsusc.2011.12.011

IF: 6.7

2012-01-01

Applied Surface Science

Abstract:Undoped and Mg-doped ZnO thin films were deposited on Si(1 0 0) and quartz substrates by the sol-gel method. The thin films were annealed at 873 K for 60 min. Microstructure, surface topography and optical properties of the thin films have been measured by X-ray diffraction (XRD), atomic force microscope (AFM), UV-vis spectrophotometer, and fluorophotometer (FL), respectively. The XRD results show that the polycrystalline with hexagonal wurtzite structure are observed for the ZnO thin film with Mg:Zn = 0.0, 0.02, and 0.04, while a secondary phase of MgO is evolved for the thin film with Mg: Zn = 0.08. The ZnO: Mg-2% thin film exhibits high c-axis preferred orientation. AFM studies reveal that rms roughness of the thin films changes from 7.89 nm to 16.9 nm with increasing Mg concentrations. PL spectra show that the UV-violet emission band around 386-402 nm and the blue emission peak about 460 nm are observed. The optical band gap calculated from absorption spectra and the resistivity of the ZnO thin films increase with increasing Mg concentration. In addition, the effects of Mg concentrations on microstructure, surface topography, PL spectra and electrical properties are discussed. Crown Copyright (C) 2011 Published by Elsevier B. V. All rights reserved.
Electrical And Optical Properties Of Phosphorus-Doped P-Type Zno Films Grown By Metalorganic Chemical Vapor Deposition

X. H. Pan,J. Jiang,Y. J. Zeng,H. P. He,L. P. Zhu,Z. Z. Ye,B. H. Zhao,X. Q. Pan

DOI: https://doi.org/10.1063/1.2828017

IF: 2.877

2008-01-01

Journal of Applied Physics

Abstract:P-doped p-type ZnO thin films have been grown by metalorganic chemical vapor deposition. By modulating the P evaporating temperature, p-type conductivity can be controlled due to the different P content incorporated into the ZnO films. The P-doped p-type ZnO thin films are of high optical quality, as indicated by low-temperature photoluminescence. P-related acceptor state with an energy level of 163 meV is identified from free-to-neutral-acceptor transitions. In addition, x-ray photoelectron spectroscopy confirms that only one chemical bonding state of P exists in the P-doped ZnO thin films. (C) 2008 American Institute of Physics.
Preparation and Properties of N-Doped P-Type ZnO Films by Solid-Source Chemical Vapour Deposition with the C -Axis Parallel to the Substrate

JG Lu,ZZ Ye,L Wang,BH Zhao,JY Huang

DOI: https://doi.org/10.1088/0256-307x/19/10/329

2002-01-01

Abstract:We report on N-doped p-type ZnO films with the c-axis parallel to the substrate. ZnO films were prepared on an alpha-Al2O3 (0001) substrate by solid-source chemical vapour deposition (CVD). Zn(CH3COO)(2)-2H(2)O was used as the precursor and CH3COONH4 as the nitrogen source. The growth temperature was varied from 300degreesC to 600degreesC. The as-grown ZnO film deposited at 500degreesC showed p-type conduction with its resistivity of 42 Omega cm, carrier density 3.7 x 10(17) cm(-3) and Hall mobility 1.26cm(2)V(-1).s(-1) at room temperature, which are the best properties for p-type ZnO deposited by CVD. The p-type ZnO film possesses a transmittance of about 85% in the visible region and a bandgap of 3.21 eV at room temperature.
Deposition of Al-N Co-Doped P-Type Zn0.95Mg0.05O Thin Films

Jian Zhongxiang,Ye Zhizhen,Gao Guohua,Lu Yangfan,Zhao Binghui,Zeng Yujia,Zhu Liping

DOI: https://doi.org/10.3969/j.issn.1674-4926.2007.03.020

2007-01-01

Chinese Journal of Semiconductors

Abstract:Al-N codoped p-type Zn0.95Mg0.05O thin films were deposited on glass substrates by DC reactive manetron sputtering, N2O was used as the N doping source. The XRD patterns showed that the introduction of Mg and Al has no effect on the crystallinity of the films, the films all showed c-axis preferential orientation.A conversion of conduction type was confirmed by Hall effect measurement in a range of temperature from 400 to 530℃.The lowest reliable room temperature resistivity was found to be 58.5Ω·cm,with a carrier concentration of 1.95e17cm-3 and a Hall mobility of 0.546cm2／(V·s).The p-type behavior is stable.The optical transmittance spectra reveal blue shift in optical bandgap for the p-type Zn0.95Mg0.05O comparing with that for pure ZnO,which confirms the effective incorporation of Mg.The band gap of alloy is controllable.
P-Type Behavior of Nitrogen Doped, Lithium Doped, and Nitrogen-Lithium Codoped Zn0.11mg0.89o Thin Films

M. X. Qiu,X. Q. Gu,Z. Z. Ye,J. G. Lu,H. P. He,Y. Z. Zhang,B. H. Zhao

DOI: https://doi.org/10.1116/1.3159784

2009-01-01

Abstract:N-doped, Li-doped, and Li–N doped Zn0.89Mg0.11O thin films have been prepared by pulsed laser deposition. Hall-effect measurements indicate that the doping technique plays an important role in the p-type behavior of ZnMgO. Li doping produces high-resistivity p-type ZnMgO films, whereas N doping produces ZnMgO films with indeterminate carrier type. In contrast, Li–N codoping results in low resistivity and stable p-type ZnMgO films. The enhancement by Li and N coincorporation is investigated by secondary ion mass spectroscopy and is possibly responsible for the good p-type conduction in Li–N dual-acceptor doped Zn0.89Mg0.11O.
Fabrication of p-type ZnMgO codoped with Al and N using dc reactive magnetron sputtering

Y YE,Z YE,L CHEN,B ZHAO,L ZHU

DOI: https://doi.org/10.1016/j.apsusc.2006.04.039

IF: 6.7

2006-01-01

Applied Surface Science

Abstract:We report the fabrication of p-type Zn0.9Mg0.1O thin films codoped with Al and N via dc magnetron sputtering method. The XRD patterns show the as-grown films with a strict c-axis orientation. Hall effect measurement confirms the conversion of conduction type in a certain range of temperature. The obtained films with the best electrical properties show a hole concentration in the order of 10(18) cm(-3) and resistivity in the range of 20-30 Omega cm. The transmittance spectrum reveals a distinct blue shift between pure ZnO and Al-N codoped Zn0.9Mg0.1O films, which confirms the effective incorporation of Mg. The band gap of the alloy is controllable. (c) 2006 Elsevier B.V. All rights reserved.
Structural, Electrical And Optical Properties Of Zn1-Xmgxo Films Prepared By Reactive Dc Sputtering

B. B. Jiang,X. Lin,S. J. Li,X. He,Y. L. Li,S. D. Zhang

2011-01-01

Abstract:Zn1-xMgxO thin films were prepared by reactive DC sputtering with Zn&Mg insetting target and ZnMg alloying target respectively for the first time. We compared the properties of Zn1-xMgxO thin films fabricated from the two targets. We studied the effect of oxygen content and postannealing on the properties of Zn1-xMgxO films. XRD, AFM, and spectrophotometer were used to measure the properties of Zn1-xMgxO films. From XRD patterns, we observed two diffraction peaks at around 34 and 36 corresponding to (0002) orientation of Zn1-xMgxO. Zn1-xMgxO films fabricated in our experiment were ZnO hexagonal structure, and Zn1-xMgxO films grown from ZnMg alloying target showed better preference to C axis, with larger grain size and rougher surface. Energy band gap (Eg) under different O-2 content is 3.94 eV, 3.76 eV and 3.63 eV respectively. The process of annealing at 300 degrees C for 1h helped the grain recrystallization, thus the grain size and the surface roughness increased as a result of this.
Highly Conducting and Wide-Band Transparent F-doped Zn1−xMgxO Thin Films for Optoelectronic Applications

Y. M. Guo,L. P. Zhu,J. Jiang,Y. G. Li,L. Hu,H. B. Xu,Z. Z. Ye

DOI: https://doi.org/10.1016/j.jallcom.2014.02.181

IF: 6.2

2014-01-01

Journal of Alloys and Compounds

Abstract:Fluorine (F) doped Zn-1 xMgxO thin films were deposited on quartz via pulsed laser deposition (PLD). F doping can decrease resistivity and broaden the bandgap of Zn-1 xMgxO thin films as well when F concentration is less than 3%, otherwise F doping will backfire. The structural, electrical, and optical properties of these thin films were studied as a function of deposition temperatures. The Zn0.9Mg0.1OF0.03 thin films deposited at 350 degrees C are optimal to be applied as transparent electrodes, taking both electrical and optical properties into account. Thin films have a low resistivity about 6.92 x 10 (4)Omega cm, with a carrier concentration of 5.26 x 10(20) cm (3), and a Hall mobility of 17.2 cm(2) V (1) s (1). The average optical transmittance is higher than 85% in the visible wavelength region. (C) 2014 Elsevier B.V. All rights reserved.
Preparation and Characteristics of P-Type Zno Films by Dc Reactive Magnetron Sputtering

ZZ Ye,JG Lu,HH Chen,YZ Zhang,L Wang,BH Zhao,JY Huang

DOI: https://doi.org/10.1016/s0022-0248(03)01007-8

IF: 1.8

2003-01-01

Journal of Crystal Growth

Abstract:P-type ZnO films with c-axis orientation deposited by DC reactive magnetron sputtering are first reported in this paper. ZnO films were prepared in NH3–O2 atmosphere (ammonia concentration varied from 0% to 67%) with the substrate temperature in the range of 400–550°C. The properties were examined by X-ray diffraction, atomic force microscopy, Hall measurement, spreading resistance processing and optical transmission spectra. Results showed that excess zinc and interstitial hydrogen play important roles in the doping process. The N-doped ZnO film deposited on α-Al2O3 (0001) at a substrate temperature of 500°C and an ammonia concentration of 50% showed p-type conduction with good electrical properties. A carrier density of 3.2×1017cm−3 and resistivity of 35Ωcm were observed. The p-type ZnO films possess a transmittance of about 90% in the visible region and a band gap of 3.21eV at room temperature. In addition, ZnO p–n homojunctions on p-Si(100) substrate (p-ZnO:N/n-ZnO/p-Si) have also been first achieved, which could further open the door for practical applications in diverse optical devices.
MOCVD growth and properties of ZnO and Zn1-xMgxO films

youdou zheng,shulin gu,jiandong ye,wei liu,shunmin zhu,feng qin,liqun hu,rong zhang,y j shi

DOI: https://doi.org/10.1109/COS.2003.1278155

2003-01-01

Abstract:In this work, the high-quality ZnO based films were epitaxially deposited by low-pressure metal organic chemical vapor deposition (LP-MOCVD) technique. The characteristics of ZnO films were studied as a function of the growth conditions such as the growth temperatures, and the flow ratio of II/VI, which dramatically affect the structure and the associated optical properties of the epilayer. The spontaneous emission spectrum measured at the low temperature of 4 K shows an emission peak related to donor-bound exciton at the full width of 2 nm, indicating rather high-quality of the ZnO epilayer obtained by optimizing the above growth conditions. The Zn1-xMgxO alloy thin film has been grown with the incorporation of Mg at a maximum value of x=0.22. The structure and optical properties of Zn1-xMgxO alloy thin film has then been discussed briefly.
Magnetic and Optical Properties of Zn1−xCoxO Thin Films Prepared by Plasma Enhanced Chemical Vapor Deposition

W. Q. Zou,Z. R. Mo,Z. L. Lu,Z. H. Lu,F. M. Zhang,Y. W. Du

DOI: https://doi.org/10.1016/j.physb.2008.06.012

2008-01-01

Abstract:Polycrystalline Zn1−xCoxO (x=0, 0.02, 0.06) thin films have been synthesized by plasma enhanced chemical vapor deposition (PECVD). The structural, optical, and magnetic properties of the films were investigated. It is shown from X-ray analyses that all the films have wurtzite structure. In photoluminescence (PL) spectra, near band edge (NBE) emissions were observed in all of the films with a blue shift with the increase of Co content. The results from both the X-ray and PL spectra analysis reveal that Co ions substitute for the Zn2+ ions of the ZnO matrix. The field dependence and temperature dependence of magnetization demonstrate that the Zn1−xCoxO film materials are ferromagnetic with Curie temperature over 300K.
Fabrication of Sb-Doped p-Type ZnO Thin Films by PLD

Xinhua Pan,Zhizhen Ye,Liping Zhu,Xiuquan Gu,Haiping He

DOI: https://doi.org/10.3321/j.issn:0253-4177.2007.z1.070

2007-01-01

Journal of Semiconductors

Abstract:Antimony-doped p-type ZnO thin films were deposited on quartz substrates by pulsed laser deposition.X-ray diffraction shows that the films are highly(002)-oriented.X·ray photoelectron spectroscopy verifies that antimony(Sb)has been doped into ZnOthin films，and the core Sb occupies the Zn site but not the O site.Hall measurement shows that the best p-type ZnO film has a low resistivity of 2.21Ω·cm，a hole concentration of 2.30 x 10^18 cm-3 and a Hall mobility of 1.23cm2/(v·s).
Fabrication of Sb-Doped P-Type Zno Thin Films by Pulsed Laser Deposition

Xinhua Pan,Zhizhen Ye,Jiesheng Li,Xiuquan Gu,Yujia Zeng,Haiping He,Liping Zhu,Yong Che

DOI: https://doi.org/10.1016/j.apsusc.2006.11.014

IF: 6.7

2007-01-01

Applied Surface Science

Abstract:p-Type ZnO thin films have been realized via monodoping antimony (Sb) acceptor by using pulsed laser deposition. The obtained films with the best electrical properties show a hole concentration in the order of 1018cm−3 and resistivity in the range of 2–4Ωcm. X-ray diffraction measurements revealed that all the films possessed a good crystallinity with (002)-preferred orientation. Guided by X-ray photoemission spectroscopy analysis and a model for large-sized-mismatched group-V dopant in ZnO, an SbZn–2VZn complex is believed to be the most possible acceptor in the Sb-doped p-type ZnO thin films.
Evolution Of Optical Properties And Electronic Structures: Band Gaps And Critical Points In Mgxzn1-Xo (0 X 0.2) Thin Films

Yue-Jie Shi,Rong-Jun Zhang,Xin Chen,Lei Wang,Lei Chen,Qing-Hua Huang,Da-Hai Li,Yu-Xiang Zheng,Song-You Wang,Ning Dai,Liang-Yao Chen

DOI: https://doi.org/10.1039/c8cp04942d

IF: 3.3

2018-01-01

Physical Chemistry Chemical Physics

Abstract:MgxZn1-xO (ZMO) thin films with tunable Mg content were deposited by atomic layer deposition (ALD) on silicon substrates at 190 degrees C. The elemental and structural properties were acquired by X-ray photoelectron spectroscopy, transmission electron microscopy, atomic force microscopy and X-ray diffraction. Spectroscopic ellipsometry measurements were performed to reveal the evolution of the dielectric functions and critical points in the ZMO thin films by point-by-point fit in the photon energy range of 1.2-6.0 eV. The dependence of the dielectric functions on doping content is clearly demonstrated and physically explained. The critical point energies and the types of interband optical transitions were extracted from standard lineshape analysis of the second derivatives of the dielectric functions. The critical point features were discussed in terms of band structure modification and structural homogeneity arisen by introducing the Mg dopant into the films. Controlling these transitions by changing the doping content will be of practical significance in emerging ZMO-based thin-film photonic and optoelectronic devices.

ChemInform Abstract: Fabrication and Properties of P‐type K Doped Zn1‐xMgxO Thin Film.

Fabrication and Properties of P-Type K Doped Zn1−Mg O Thin Film

Preparation and Properties of P-Type Ag-doped ZnMgO Thin Films by Pulsed Laser Deposition

The Fabrication of Na Doped P -Type Zn 1− X Mg X O Films by Pulsed Laser Deposition

Fabrication of P-Type ZnMgO Films Via Pulsed Laser Deposition Method by Using Li As Dopant Source

Fabrication of P‐type Li‐Doped ZnO Films by RF Magnetron Sputtering

Fabrication of P-Type Li-Doped Zno Films by Pulsed Laser Deposition

Preparation and Characterization of Mg-doped ZnO Thin Films by Sol–gel Method

Electrical And Optical Properties Of Phosphorus-Doped P-Type Zno Films Grown By Metalorganic Chemical Vapor Deposition

Preparation and Properties of N-Doped P-Type ZnO Films by Solid-Source Chemical Vapour Deposition with the C -Axis Parallel to the Substrate

Deposition of Al-N Co-Doped P-Type Zn0.95Mg0.05O Thin Films

P-Type Behavior of Nitrogen Doped, Lithium Doped, and Nitrogen-Lithium Codoped Zn0.11mg0.89o Thin Films

Fabrication of p-type ZnMgO codoped with Al and N using dc reactive magnetron sputtering

Structural, Electrical And Optical Properties Of Zn1-Xmgxo Films Prepared By Reactive Dc Sputtering

Highly Conducting and Wide-Band Transparent F-doped Zn1−xMgxO Thin Films for Optoelectronic Applications

Preparation and Characteristics of P-Type Zno Films by Dc Reactive Magnetron Sputtering

MOCVD growth and properties of ZnO and Zn1-xMgxO films

Magnetic and Optical Properties of Zn1−xCoxO Thin Films Prepared by Plasma Enhanced Chemical Vapor Deposition

Fabrication of Sb-Doped p-Type ZnO Thin Films by PLD

Fabrication of Sb-Doped P-Type Zno Thin Films by Pulsed Laser Deposition

Evolution Of Optical Properties And Electronic Structures: Band Gaps And Critical Points In Mgxzn1-Xo (0 X 0.2) Thin Films