Abstract:Silicon and germanium are waveguide core materials for Si-based Group-IV integrated photonic circuit applications in the mid-infrared (MIR) wavelength range defined here as 2 to 15 um. In particular, Si and Ge are transparent up to 8 and 15 μm respectively, thus offering applications in communications and the sensing of biochemical, medical, and environmental variables [1]. The major problem with the MIR transition is that the most dominant platform of SOI can be used only up to 4 μm due to the high absorption loss of silicon dioxide. Therefore alternative material platforms have to be utilized for longer wavelengths. Presently, the Ge-on-Si platform (known as GOS) has been demonstrated to be workable to 15 μm-thereby offering potential for MIR applications. However, the refractive index contrast between Ge (n=4.1) and Si (n=3.4) is considerably less than that of SOI. As a result, the bend radii in GOS must be considerably larger than those in SOI, causing the footprint of GOS on-chip sensor circuits to be generally larger than those of SOI, an unwanted increase in “real estate.” What is wanted is a better alternative Ge-waveguide platform that will provide a larger core-clad index contrast than GOS as well as useful transparency and smaller channel-bend radii. To achieve those goals, the new structure proposed and realized here is Germanium on Silicon Nitride (Ge-on-Si3N4) which is referred-to here as GON. The refractive index of silicon nitride is 2.4 and it is transparent up to ~7 μm. So the index contrast in GON is 1.7 compared to 0.7 in GOS. Our simulation results show that this structure can provide a more compact integrated network whose bend radii are only a few μm. Most importantly, we have developed a new and practical wafer bonding and layer transfer technique, reported here, to realize GON.

Fabrication of Sub-200 Nm AlN-GaN-AlN Waveguide with Cleaved End Facet

Fabrication of GaN‐based Ridge Waveguides with Very Smooth and Vertical Sidewalls by Combined Plasma Dry Etching and Wet Chemical Etching

Gan-Based Ridge Waveguides With Very Smooth And Vertical Sidewalls By Icp Dry Etching And Chemical Etching

Design and fabrication of 1 × 32 silica-based arrayed waveguide grating

Fabrication of Si/Si1-Xgex Waveguide Wdm Components

Optical Properties of A Silicon-Rich Nitride Ridge Waveguide at $2\ \boldsymbol{\mu}\mathbf{m}$ Wavelengths

A ridge waveguide constructed by H+ implantation and precise diamond blade dicing in high-gain Nd3+-doped laser glass

Characterization and Optimal Design of Silicon-Rich Nitride Nonlinear Waveguides for 2 Μm Wavelength Band

Manufacturing of selectively buried channel waveguide on glass substrate

Analysis of deep-etched, single-mode GaAs/GaAlAs optical rib waveguides using discrete spectral index method

High-efficiency Apodized-Imaging Chip-Fiber Grating Coupler for Silicon Nitride Waveguides

Compact Arrayed-Waveguide Grating on Silicon-On-Insulator with Integrated Waveguide Turning Mirrors

Lithium niobate ridge waveguides by nickel diffusion and proton-exchanged wet etching

Modeling and Fabrication of Ge-on-Si3N4 for Low Bend-Loss Waveguides

Experimental Demonstration of an Apodized-Imaging Chip-Fiber Grating Coupler for Si_3N_4 Waveguides

Fabrication of single-mode ridge SU-8 waveguides based on inductively coupled plasma etching

Optimization of nanoscale silicon waveguide fabrication

Smooth Etching of Epitaxially Grown AlN Film by Cl2/BCl3/Ar-based Inductively Coupled Plasma

Lithium niobate ridged waveguides with smooth vertical sidewalls fabricated by an ultra-precision cutting method

Electrochemically sliced low loss AlGaN optical microresonators

Fabricated Technology for Polymer/si Arrayed Waveguide Grating