Abstract:On-chip optical waveguides with low propagation losses and precisely engineered group velocity dispersion (GVD) are important to nonlinear photonic devices such as soliton microcombs. Yet, despite intensive research efforts, nonlinear integrated photonic platforms still feature propagation losses orders of magnitude higher than in standard optical fiber. The tight confinement and high index contrast of integrated waveguides make them highly susceptible to fabrication induced surface roughness. Therefore, microresonators with ultra-high Q factors are, to date, only attainable in polished bulk crystalline, or chemically etched silica based devices, that pose however challenges for full photonic integration. Here, we demonstrate the fabrication of silicon nitride ($\mathrm{Si_3N_4}$) waveguides with unprecedentedly smooth sidewalls and tight confinement with record low propagation losses. This is achieved by combining the photonic Damascene process with a novel reflow process, which reduces etching roughness, while sufficiently preserving dimensional accuracy. This leads to previously unattainable \emph{mean} microresonator Q factors larger than $5\times10^6$ for tightly confining waveguides with anomalous dispersion. Via systematic process step variation and two independent characterization techniques we differentiate the scattering and absorption loss contributions, and reveal metal impurity related absorption to be an important loss origin. Although such impurities are known to limit optical fibers, this is the first time they are identified, and play a tangible role, in absorption of integrated microresonators. Taken together, our work provides new insights in the origins of propagation losses in $\mathrm{Si_3N_4}$ waveguides and provides the technological basis for integrated nonlinear photonics in the ultra-high Q regime.

Electrochemically sliced low loss AlGaN optical microresonators

Ultrahigh-Q AlGaAs-on-insulator Microresonators for Integrated Nonlinear Photonics.

High speed surface acoustic wave and laterally excited bulk wave resonator based on single-crystal non-polar AlN film

Ultralow-loss tightly confining Si3N4 waveguides and high-Q microresonators

High Q micro-ring resonators fabricated from polycrystalline aluminum nitride films for near infrared and visible photonics

Ultralow-Supersaturation Al Pretreatment Toward Low Dislocation Density and Low Radio Frequency Loss GaN/AlN Epi-Stacks on High-Resistivity Si Substrates

Ultra-high-Q UV microring resonators based on single-crystalline AlN platform

Integrated High-Q Crystalline AlN Microresonators for Broadband Kerr and Raman Frequency Combs

Aluminum Nitride-on-sapphire Platform for Integrated High-Q Microresonators

Probing the loss origins of ultra-smooth $\mathrm{Si_3N_4}$ integrated photonic waveguides

Low-loss Lithium Niobate on Insulator (LNOI) Waveguides of a 10 cm-length and a Sub-nanometer Surface Roughness

Nanomechanical crystalline AlN resonators with high quality factors for quantum optoelectromechanics

Graded-Index Separate Confinement Heterostructure AlGaN Nanowires: Toward Ultraviolet Laser Diodes Implementation

CMOS-compatible photonic integrated circuits on thin-film ScAlN

AlN/Si interface engineering to mitigate RF losses in MOCVD grown GaN-on-Si substrates

Long Low-Loss-Litium Niobate on Insulator Waveguides with Sub-Nanometer Surface Roughness

Optical, Structural, and Nuclear Scientific Studies of AlGaN with High Al Composition

Low-threshold Green Lasing in Heterogeneously Integrated InGaN-based Micro-rings Covered by Distributed Bragg Reflectors on Si (100)

Suspended AlGaAs-Integrated Nonlinear Photonics

Sputtered Aluminum Nitride Waveguides for the Telecommunication Spectrum with less than 0.16 dB/cm Loss