Abstract:Heterogeneous and monolithic integration of the versatile low loss silicon nitride platform with low temperature materials such as silicon electronics and photonics, III-V compound semiconductors, lithium niobate, organics, and glasses, has been inhibited by the need for high temperature annealing as well as the need for different process flows for thin and thick waveguides. New techniques are needed to maintain the state-of-the-art losses, nonlinear properties, and CMOS compatible processes while enabling this next generation of 3D silicon nitride integration. We report a significant advance in silicon nitride integrated photonics, demonstrating the lowest losses to date for an anneal-free process at a maximum temperature of 250 C, with the same deuterated silane based fabrication flow, for nitride and oxide, for an order of magnitude range in nitride thickness without requiring stress mitigation or polishing. We report record low losses for anneal-free nitride core and oxide cladding, enabling 1.77 dB/m loss and 14.9 million Q for 80 nm nitride core waveguides, more than half an order magnitude lower loss than previously reported 270 C processes, and 8.66 dB/m loss and 4.03 million Q for 800 nm thick nitride. We demonstrate laser stabilization with over 4 orders of magnitude frequency noise reduction using a thin nitride reference cavity. And using a thick nitride micro-resonator, we demonstrate parametric gain and Optical Parametric Oscillation (OPO) with the lowest reported OPO threshold per unit resonator length for low temperature fabricated nitride, and supercontinuum generation over two octaves. These results represent a significant step towards a uniform ultra-low loss silicon nitride homogeneous and heterogeneous platform for both thin and thick waveguides capable of linear and nonlinear photonic circuits and integration with low temperature materials and processes.

Sputtered Aluminum Nitride Waveguides for the Telecommunication Spectrum with less than 0.16 dB/cm Loss

High Q micro-ring resonators fabricated from polycrystalline aluminum nitride films for near infrared and visible photonics

Ultrabroadband and Flattened Dispersion in Aluminum Nitride Slot Waveguides

Optical waveguide loss minimized into gallium nitride based structures grown by metal organic vapor phase epitaxy

Electrochemically sliced low loss AlGaN optical microresonators

High-Q aluminum nitride photonic crystal nanobeam cavities

Optical Properties of A Silicon-Rich Nitride Ridge Waveguide at $2\ \boldsymbol{\mu}\mathbf{m}$ Wavelengths

Ultralow-loss tightly confining Si3N4 waveguides and high-Q microresonators

Aluminum nitride waveguide beam splitters for integrated quantum photonic circuits

Characterization and Optimal Design of Silicon-Rich Nitride Nonlinear Waveguides for 2 Μm Wavelength Band

Growth of Aluminum Nitride on a Silicon Nitride Substrate for Hybrid Photonic Circuits

Linear And Nonlinear Characterization Of Silicon/Silicon-Rich Nitride Hybrid Waveguides

High confinement, high yield Si3N4 waveguides for nonlinear optical application

Anneal-free ultra-low loss silicon nitride integrated photonics

Channel Waveguides in Lithium Niobate and Lithium Tantalate

Sub-micrometer-thick and Low-Loss Ge20Sb15Se65 Rib Waveguides for Nonlinear Optical Devices

CMOS-compatible photonic integrated circuits on thin-film ScAlN

Measured optical losses of Sc doped AlN waveguides

Epitaxial Single-Crystal ScAlN on 4H-SiC for High-Velocity, Low-Loss SAW Devices

Aluminum Nitride Electro-optic Modulator at Mid-IR Wavelengths