Abstract:Silicon and germanium are waveguide core materials for Si-based Group-IV integrated photonic circuit applications in the mid-infrared (MIR) wavelength range defined here as 2 to 15 um. In particular, Si and Ge are transparent up to 8 and 15 μm respectively, thus offering applications in communications and the sensing of biochemical, medical, and environmental variables [1]. The major problem with the MIR transition is that the most dominant platform of SOI can be used only up to 4 μm due to the high absorption loss of silicon dioxide. Therefore alternative material platforms have to be utilized for longer wavelengths. Presently, the Ge-on-Si platform (known as GOS) has been demonstrated to be workable to 15 μm-thereby offering potential for MIR applications. However, the refractive index contrast between Ge (n=4.1) and Si (n=3.4) is considerably less than that of SOI. As a result, the bend radii in GOS must be considerably larger than those in SOI, causing the footprint of GOS on-chip sensor circuits to be generally larger than those of SOI, an unwanted increase in “real estate.” What is wanted is a better alternative Ge-waveguide platform that will provide a larger core-clad index contrast than GOS as well as useful transparency and smaller channel-bend radii. To achieve those goals, the new structure proposed and realized here is Germanium on Silicon Nitride (Ge-on-Si3N4) which is referred-to here as GON. The refractive index of silicon nitride is 2.4 and it is transparent up to ~7 μm. So the index contrast in GON is 1.7 compared to 0.7 in GOS. Our simulation results show that this structure can provide a more compact integrated network whose bend radii are only a few μm. Most importantly, we have developed a new and practical wafer bonding and layer transfer technique, reported here, to realize GON.

Sub-micrometer-thick and Low-Loss Ge20Sb15Se65 Rib Waveguides for Nonlinear Optical Devices

Rib and strip chalcogenide waveguides based on Ge-Sb-Se radio-frequency sputtered films

Fabrication and Characterization of Ge 20 Sb 15 Se 65 Chalcogenide Glass Rib Waveguides for Telecommunication Wavelengths

Low-loss Photonic Device in Ge-Sb-S Chalcogenide Glass.

Mitigating waveguide loss in Ge-Sb-Se chalcogenide glass photonics

Low Propagation Loss Ge-on-Si Waveguides and Their Dependency on Processing Methods

Analysis of deep-etched, single-mode GaAs/GaAlAs optical rib waveguides using discrete spectral index method

Low-loss chalcogenide waveguides on lithium niobate for the mid-infrared

Transmission measurement at 10.6 microns of Te2As3Se5 rib-waveguides on As2S3 substrate

Fabrication of Si/Si1-Xgex Waveguide Wdm Components

Nonlinear Optical Properties of Integrated GeSbS Chalcogenide Waveguides

Modeling and Fabrication of Ge-on-Si3N4 for Low Bend-Loss Waveguides

Optimization of Deep-Etched,Single-Mode GaAs/GaAlAs Optical Rib Waveguides Using Discrete Spectral Index Method

Ultra-low-loss High-Aspect-ratio Si3N4 Waveguides.

Mid-infrared As2Se3 Chalcogenide Glass-on-silicon Waveguides

Mid-infrared Nonlinear Silicon Hybrid Waveguide with High Figure of Merit

Characterization and Optimal Design of Silicon-Rich Nitride Nonlinear Waveguides for 2 Μm Wavelength Band

Germanium-On-Silicon Nitride Waveguides for Mid-Infrared Integrated Photonics

Study of Silicon-on-glass Waveguides

Low-loss SiGe waveguides for mid-infrared photonics fabricated on 200 mm wafers

Nonlinear Optical Properties of Chalcogenide Glass Waveguides Fabricated by Hot Melt Smoothing and Micro-Trench Filling