Abstract:Silicon and germanium are waveguide core materials for Si-based Group-IV integrated photonic circuit applications in the mid-infrared (MIR) wavelength range defined here as 2 to 15 um. In particular, Si and Ge are transparent up to 8 and 15 μm respectively, thus offering applications in communications and the sensing of biochemical, medical, and environmental variables [1]. The major problem with the MIR transition is that the most dominant platform of SOI can be used only up to 4 μm due to the high absorption loss of silicon dioxide. Therefore alternative material platforms have to be utilized for longer wavelengths. Presently, the Ge-on-Si platform (known as GOS) has been demonstrated to be workable to 15 μm-thereby offering potential for MIR applications. However, the refractive index contrast between Ge (n=4.1) and Si (n=3.4) is considerably less than that of SOI. As a result, the bend radii in GOS must be considerably larger than those in SOI, causing the footprint of GOS on-chip sensor circuits to be generally larger than those of SOI, an unwanted increase in “real estate.” What is wanted is a better alternative Ge-waveguide platform that will provide a larger core-clad index contrast than GOS as well as useful transparency and smaller channel-bend radii. To achieve those goals, the new structure proposed and realized here is Germanium on Silicon Nitride (Ge-on-Si3N4) which is referred-to here as GON. The refractive index of silicon nitride is 2.4 and it is transparent up to ~7 μm. So the index contrast in GON is 1.7 compared to 0.7 in GOS. Our simulation results show that this structure can provide a more compact integrated network whose bend radii are only a few μm. Most importantly, we have developed a new and practical wafer bonding and layer transfer technique, reported here, to realize GON.

Mitigating waveguide loss in Ge-Sb-Se chalcogenide glass photonics

Low-loss Photonic Device in Ge-Sb-S Chalcogenide Glass.

Rib and strip chalcogenide waveguides based on Ge-Sb-Se radio-frequency sputtered films

Nonlinear Optical Properties of Integrated GeSbS Chalcogenide Waveguides

Magnetron-sputtered and Thermal-Evaporated Low-Loss Sb-Se Phase-Change Films in Non-Volatile Integrated Photonics

Broadband Couplers for Hybrid Silicon-Chalcogenide Glass Photonic Integrated Circuits

Planar Chalcogenide Glass Mid-Infrared Photonics

Octave spanning and flat-top supercontinuum generation in standard foundry-compatible process-made Ge–Sb–Se chalcogenide glass waveguide

Fabrication and Characterization of Ge 20 Sb 15 Se 65 Chalcogenide Glass Rib Waveguides for Telecommunication Wavelengths

Optical investigation of chalcogenide glass for on-chip integrated devices

Sub-micrometer-thick and Low-Loss Ge20Sb15Se65 Rib Waveguides for Nonlinear Optical Devices

Demonstration of High-Performance, Sub-Micron Chalcogenide Glass Photonic Devices by Thermal Nanoimprint

Mid-infrared As2Se3 Chalcogenide Glass-on-silicon Waveguides

Monolithic Chalcogenide Glass Waveguide Integrated Interband Cascaded Laser

Modeling and Fabrication of Ge-on-Si3N4 for Low Bend-Loss Waveguides

Interlayer Slope Waveguide Coupler for Multilayer Chalcogenide Photonics

Si-Cmos Compatible Materials and Devices for Mid-Ir Microphotonics

Silicon-on-Insulator Waveguide Devices for Broadband Mid-Infrared Photonics

Germanium-On-Silicon Nitride Waveguides for Mid-Infrared Integrated Photonics

Effects of Shallow Suspension in Low-Loss Waveguide-Integrated Chalcogenide Microdisk Resonators

Solution-processed chalcogenide glass for integrated single-mode mid-infrared waveguides