Mid-infrared As2Se3 Chalcogenide Glass-on-silicon Waveguides

Hongtao Lin,Yi Zou,Danto, S.,Musgraves, J.D.

DOI: https://doi.org/10.1109/group4.2012.6324148

2012-01-01

Abstract:We report the fabrication and characterization of high-index-contrast AssSe3 chalcogenide glass waveguides on silicon. Guided mode optical transmission are measured at 5.27 μm mid-infrared wavelength with low optical loss.

What problem does this paper attempt to address?

Planar Chalcogenide Glass Mid-Infrared Photonics

Hongtao Lin,Lan Li,Yi Zou,Fei Deng,Chaoying Ni,Sylvain Danto,J. David Musgraves,Kathleen Richardson,Stephen T. Kozacik,Maciej Murakowski,Dennis Prather,Juejun Hu

DOI: https://doi.org/10.1117/12.2035688

2014-01-01

Abstract:Chalcogenide glasses, namely the amorphous compounds containing sulfur, selenium, and/or tellurium, have emerged as a promising material candidate for mid-infrared integrated photonics given their wide optical transparency window, high linear and nonlinear indices, as well as their capacity for monolithic integration on a wide array of substrates. Exploiting these unique features of the material, we demonstrated high-index-contrast, waveguide-coupled As2Se3 chalcogenide glass resonators monolithically integrated on silicon with a high intrinsic quality factor of 2 x 10(5) at 5.2 micron wavelength, and what we believe to be the first waveguide photonic crystal cavity operating in the mid-infrared.
Demonstration of High-Q Mid-Infrared Chalcogenide Glass-On-Silicon Resonators

Hongtao Lin,Lan Li,Yi Zou,Sylvain Danto,J. David Musgraves,Kathleen Richardson,Stephen Kozacik,Maciej Murakowski,Dennis Prather,Pao T. Lin,Vivek Singh,Anu Agarwal,Lionel C. Kimerling,Juejun Hu

DOI: https://doi.org/10.1364/ol.38.001470

IF: 3.6

2013-01-01

Optics Letters

Abstract:We demonstrated high-index-contrast, waveguide-coupled As2Se3 chalcogenide glass resonators monolithically integrated on silicon fabricated using optical lithography and a lift-off process. The resonators exhibited a high intrinsic quality factor of 2×10(5) at 5.2 μm wavelength, which is among the highest values reported in on-chip mid-infrared (mid-IR) photonic devices. The resonator can serve as a key building block for mid-IR planar photonic circuits.
Rib and strip chalcogenide waveguides based on Ge-Sb-Se radio-frequency sputtered films

Wei Zhang,Shixun Dai,Xiang Shen,Yu Chen,Shuangshuang Zhao,Changgui Lin,Liang Zhang,Jian Bai

DOI: https://doi.org/10.1016/j.matlet.2013.01.122

IF: 3

2013-01-01

Materials Letters

Abstract:Rib and strip chalcogenide waveguides were demonstrated using photolithography technique and reactive ion beam etching method in a CF4/Ar atmosphere, based on Ge–Sb–Se films deposited by radio-frequency sputtering. The study of compositional, morphological and structural characteristics of the films was investigated, the propagation losses with different widths were measured and optical performance in rib and strip waveguides with different sizes were analyzed and compared. The thin films showed similar composition identical to the bulk glass targets with very low surface roughnesses. The fabricated waveguides by reactive ion beam etching had low surface roughnesses and reasonable vertical sidewalls. Propagation losses of rib and strip waveguides were measured at 1550nm with different widths, and the methods to decrease the propagation losses were introduced. The techniques were indicated feasible for fabricating rib and strip waveguides with potential applications of integrated optics fields in further study.
High-Q Mid-Infrared Chalcogenide Glass-On-Silicon Resonators for Spectroscopic Chemical Sensing

Hongtao Lin,Yang Xiang,Lan Li,Kati McLaughlin,Yangchen Liu,Yeshwant Chillakuru,Erick Koontz,J. David Musgraves,Kathleen Richardson,Chaoying Ni,Juejun Hu

DOI: https://doi.org/10.1109/sum.2014.42

2013-01-01

Abstract:We fabricated and characterized high-index-contrast As2Se3 micro-disk resonators on silicon with a record loaded Q-factor of 105 at 5.2 μm wavelength. On-chip chemical sensing using cavity-enhanced infrared spectroscopy was demonstrated using the micro-disk device.
Chalcogenide Glass Planar Photonics: from Mid-Ir Sensing to 3-D Flexible Substrate Integration

Hongtao Lin,Lan Li,Yi Zou,Okechukwu Ogbuu,Sylvain Danto,J. David Musgraves,Kathleen Richardson,Juejun Hu

DOI: https://doi.org/10.1117/12.2000683

2013-01-01

Abstract:Chalcogenide glasses, namely the amorphous compounds containing sulfur, selenium, and/or tellurium, have emerged as a promising material candidate for integrated photonics given their wide infrared transparency window, low processing temperature, almost infinite capacity for composition alloying, as well as high linear and nonlinear indices. Here we present the fabrication and characterization of chalcogenide glass based photonic devices integrated on silicon as well as on flexible polymer substrates for mid-IR sensing, optical interconnect and nonlinear optics applications.
Chalcogenide Coatings of Ge_15Sb_20S_65 and Te_20As_30Se_50

Virginie Nazabal,Michel Cathelinaud,Weidong Shen,Petr Nemec,Frederic Charpentier,Herve Lhermite,Marie-Laure Anne,Jeremie Capoulade,Fabien Grasset,Alain Moreac,Satoru Inoue,Miloslav Frumar,Jean-Luc Adam,Michel Lequime,Claude Amra

DOI: https://doi.org/10.1364/ao.47.00c114

IF: 1.9

2007-01-01

Applied Optics

Abstract:Chalcogenide coatings are investigated to obtain either optical components for spectral applications or optochemical sensors in the mid-infrared. The deposition of Ge15Sb20S65 and Te20As30Se50 chalcogenide glasses is performed by two physical techniques: electron-beam and pulsed-laser deposition. The quality of the film is analyzed by scanning electron microscopy, atomic force microscopy, and energy dispersive spectroscopy to characterize the morphology, topography, and chemical composition. The optical properties and optical constants are also determined. A CF4 dry etching is performed on these films to obtain a channeled optical waveguide. For a passband filter made by electron-beam deposition, cryolite as a low-refractive-index material and chalcogenide glasses as high-refractive-index materials are used to favor a large refractive-index contrast. A shift of a centered wavelength of a photosensitive passband filter is controlled by illumination time. (C) 2008 Optical Society of America.
Chalcogenide Glass Microfibers for Mid-Infrared Optics

Dawei Cai,Yu Xie,Xin Guo,Pan Wang,Limin Tong

DOI: https://doi.org/10.3390/photonics8110497

IF: 2.536

2021-01-01

Photonics

Abstract:With diameters close to the wavelength of the guided light, optical microfibers (MFs) can guide light with tight optical confinement, strong evanescent fields and manageable waveguide dispersion and have been widely investigated in the past decades for a variety of applications. Compared to silica MFs, which are ideal for working in visible and near-infrared regions, chalcogenide glass (ChG) MFs are promising for mid-infrared (mid-IR) optics, owing to their easy fabrication, broad-band transparency and high nonlinearity, and have been attracting increasing attention in applications ranging from near-field coupling and molecular sensing to nonlinear optics. Here, we review this emerging field, mainly based on its progress in the last decade. Starting from the high-temperature taper drawing technique for MF fabrication, we introduce basic mid-IR waveguiding properties of typical ChG MFs made of As2S3 and As2Se3. Then, we focus on ChG-MF-based passive optical devices, including optical couplers, resonators and gratings and active and nonlinear applications of ChG MFs for mid-IR Raman lasers, frequency combs and supercontinuum (SC) generation. MF-based spectroscopy and chemical/biological sensors are also introduced. Finally, we conclude the review with a brief summary and an outlook on future challenges and opportunities of ChG MFs.
Chalcogenide glass based integrated photonics

lan li,hongtao lin,yi zou,okechukwu ogbuu,sylvain danto,j david musgraves,kathleen richardson,juejun hu

DOI: https://doi.org/10.1117/12.2000678

2012-01-01

Abstract:Chalcogenide glasses, namely the amorphous compounds containing sulfur, selenium, and/or tellurium, have emerged as a promising material candidate for integrated photonics given their wide infrared transparency window, low processing temperature, almost infinite capacity for composition alloying, as well as high linear and nonlinear indices. Here we present the fabrication and characterization of chalcogenide glass based photonic devices integrated on silicon as well as on flexible polymer substrates for sensing, optical interconnect and nonlinear optics applications.
Linear and third order nonlinear optical properties of GeSbS chalcogenide integrated waveguides

Samuel Serna,Hongtao Lin,Carlos Alonso-Ramos,Anupama Yadav,Xavier Le Roux,Kathleen Richardson,Eric Cassan,Nicolas Dubreuil,Juejun Hu,Laurent Vivien

DOI: https://doi.org/10.1109/GROUP4.2017.8082220

2017-01-01

Abstract:We report on the linear and nonlinear measurements of GeSbS chalcogenide glasses in waveguide configuration. Single-mode waveguides and ring resonators have been characterized in linear and nonlinear optical regimes around 1.58 μm wavelength demonstrating the interest of using this material for ultrahigh-bandwidth optical communications systems.
Low-loss Photonic Device in Ge-Sb-S Chalcogenide Glass.

Qingyang Du,Yizhong Huang,Junying Li,Derek Kita,Jerome Michon,Hongtao Lin,Lan Li,Spencer Novak,Kathleen Richardson,Wei Zhang,Juejun Hu

DOI: https://doi.org/10.1364/ol.41.003090

IF: 3.6

2016-01-01

Optics Letters

Abstract:Low-loss waveguides constitute an important building block for integrated photonic systems. In this work, we investigated low-loss photonic device fabrication in Ge23Sb7S70 chalcogenide glass using electron beam lithography followed by plasma dry etching. High-index-contrast waveguides with a low propagation loss of 0.5 dB/cm and microdisk resonators with an intrinsic quality factor (Q-factor) of 1.2×106 were demonstrated. Both figures represent, to the best of our knowledge, the best low-loss results reported thus far in submicrometer single-mode chalcogenide glass devices.
Third Order Nonlinear Properties of GeSbS Chalcogenide Waveguides

Samuel F. Serna Otálvaro,Hongtao Lin,Carlos Alonso-Ramos,Anupama Yadav,Xavier Le Roux,Kathleen Richardson,Eric Cassan,Nicolas Dubreuil,Juejun Hu,Laurent Vivien

DOI: https://doi.org/10.1364/fio.2017.jw3a.72

2017-01-01

Abstract:We report the characterization of highly nonlinear GeSbS chalcogenide glass integrated waveguides. Linear and nonlinear measurements were performed in the telecom window, illustrating the potential of As-free chalcogenides for photonics applications.
Nonlinear Optical Properties of Integrated GeSbS Chalcogenide Waveguides

Samuel Serna,Hongtao Lin,Carlos Alonso-Ramos,Anupama Yadav,Xavier Le Roux,Kathleen Richardson,Eric Cassan,Nicolas Dubreuil,Juejun Hu,Laurent Vivien

DOI: https://doi.org/10.1364/prj.6.000b37

IF: 7.6

2018-01-01

Photonics Research

Abstract:In this paper, we report the experimental characterization of highly nonlinear GeSbS chalcogenide glass waveguides. We used a single-beam characterization protocol that accounts for the magnitude and sign of the real and imaginary parts of the third-order nonlinear susceptibility of integrated Ge23Sb7S70 (GeSbS) chalcogenide glass waveguides in the near-infrared wavelength range at lambda = 1580 nm. We measured a waveguide nonlinear parameter of 7.0 +/- 0.7 W-1.m(-1), which corresponds to a nonlinear refractive index of n(2) = (0.93 +/- 0.08) x 10(-18) m(2)/W, comparable to that of silicon, but with an 80 times lower two-photon absorption coefficient beta(TPA) = (0.010 +/- 0.003) cm/GW, accompanied with linear propagation losses as low as 0.5 dB/cm. The outstanding linear and nonlinear properties of GeSbS, with a measured nonlinear figure of merit FOMTPA = 6.0 +/- 1.4 at lambda = 1580 nm, ultimately make it one of the most promising integrated platforms for the realization of nonlinear functionalities. (C) 2018 Chinese Laser Press.
Third Order Nonlinear Properties of GeSbS Chalcogenide Waveguides (Poster)

Samuel Serna,Hongtao Lin,Carlos Alonso-Ramos,Anupama Yadav,Xavier Le Roux,Kathleen Richardson,Eric Cassan,Nicolas Dubreuil,Juejun Hu,Laurent Vivien

DOI: https://doi.org/10.1364/fio.2017.jw3a.72

2017-01-01

Abstract:We report the characterization of highly nonlinear GeSbS chalcogenide glass integrated waveguides. Linear and nonlinear measurements were performed in the telecom window, illustrating the potential of As-free chalcogenides for photonics applications.
Thermal Nanoimprint Fabrication Of Chalcogenide Glass Waveguide Resonators

Yi Zou,Hongtao Lin,Lan Li,Sylvain Danto,J. David Musgraves,Kathleen Richardson,Juejun Hu

DOI: https://doi.org/10.1364/CLEO_SI.2013.CTh1J.5

2013-01-01

Abstract:We demonstrated thermal nanoimprint fabrication of low loss waveguides and micro-ring resonators in thermally evaporated and solution processed chalcogenide glass films. A high micro-ring quality factor of 75,000 is achieved at 1550 nm wavelength. (c) 2013 Optical Society of America
Monolithic Chalcogenide Glass Waveguide Integrated Interband Cascaded Laser

Hongtao Lin,Chul Soo Kim,Lan Li,Mijin Kim,William W. Bewley,Charles D. Merritt,Chadwick L. Canedy,Igor Vurgaftman,A. N. U. Agarwal,Kathleen Richardson,Juejun Hu,Jerry R. Meyer

DOI: https://doi.org/10.1364/ome.435061

2021-01-01

Optical Materials Express

Abstract:Mid-infrared photonic integrated circuits (PICs) that combine on-chip light sources with other optical components constitute a key enabler for applications such as chemical sensing, light detection, ranging, and free-space communications. In this paper, we report the monolithic integration of interband cascade lasers emitting at 3.24 µm with passive, high-index-contrast waveguides made of chalcogenide glasses. Output from the chalcogenide waveguides exhibits pulsed peak power up to 150 mW (without roll-over), threshold current density 280 A/cm2, and slope efficiency 100 mW/A at 300 K, with a lower bound of 38% efficiency for coupling between the two waveguides. These results represent an important step toward the realization of fully integrated mid-infrared PICs.
Si-Cmos Compatible Materials and Devices for Mid-Ir Microphotonics

Pao Tai Lin,Vivek Singh,Jianfei Wang,Hongtao Lin,Juejun Hu,Kathleen Richardson,J. David Musgraves,Igor Luzinov,Joel Hensley,Lionel C. Kimerling,Anu Agarwal

DOI: https://doi.org/10.1364/ome.3.001474

2013-01-01

Optical Materials Express

Abstract:CMOS compatible mid-Infrared (mid-IR) microphotonics including (1) broadband SOUP (Silicon on Oxide Undercladding Pedestal) waveguides; and (2) mid-IR transparent chalcogenide glass (ChGs) waveguides monolithically integrated with a PbTe thin film photodetector; are demonstrated. Using a pedestal undercladding geometry we obtain an optical loss for our Si waveguide which is 10 dB/cm lower compared to other waveguides using planar SiO2 cladding at λ = 5 µm, and a fundamental mode is seen over a broad mid-IR spectral range. To realize a fully integrated mid-IR on-chip system, in parallel, we develop PbTe thin film detectors that can be deposited on various mid-IR platforms through a thermal evaporation technique, offering high photoresponsivity of 25 V/W from λ = 1 µm to 4 µm. The detector can be efficiently integrated, using a suitable spacer, to an underlying Chalcogenide glass (ChGs) waveguide. Our results of low loss waveguides and integrated thin film detectors enable Si-CMOS microphotonics for mid-IR applications.
Germanium-On-Silicon Nitride Waveguides for Mid-Infrared Integrated Photonics

Wei Li,P. Anantha,Shuyu Bao,Kwang Hong Lee,Xin Guo,Ting Hu,Lin Zhang,Hong Wang,Richard Soref,Chuan Seng Tan

DOI: https://doi.org/10.1063/1.4972183

IF: 4

2016-01-01

Applied Physics Letters

Abstract:A germanium-based platform with a large core-clad index contrast, germanium-on-silicon nitride waveguide, is demonstrated at mid-infrared wavelength. Simulations are performed to verify the feasibility of this structure. This structure is realized by first bonding a silicon-nitride-deposited germanium-on-silicon donor wafer onto a silicon substrate wafer, followed by the layer transfer approach to obtain germanium-on-silicon nitride structure, which is scalable to all wafer sizes. The misfit dislocations which initially form along the interface between germanium/silicon can be removed by chemical mechanical polishing after layer transfer process resulting in a high-quality germanium layer. At the mid-infrared wavelength of 3.8 μm, the germanium-on-silicon nitride waveguide has a propagation loss of 3.35 ± 0.5 dB/cm and a bend loss of 0.14 ± 0.01 dB/bend for a radius of 5 μm for the transverse-electric mode.
Thermal nanoimprint fabrication of chalcogenide glass waveguide resonators on nonconventional plastic substrates

yi zou,hongtao lin,lan li,sylvain danto,j david musgraves,kathleen richardson,juejun hu

DOI: https://doi.org/10.1109/PHOSST.2013.6614542

2013-01-01

Abstract:We demonstrated thermal nanoimprint fabrication of photonic devices in chalcogenide glass films on both semiconductor and nonconventional plastic substrates. A high micro-ring intrinsic quality factor of 3 × 105 is achieved at 1550 nm wavelength.
Demonstration of High-Performance, Sub-Micron Chalcogenide Glass Photonic Devices by Thermal Nanoimprint

Yi Zou,Loise Moreel,Jie Zhou,Danning Zhang,Hongtao Lin,Lan Li,Qingyang Du,Juejun Hu,Sylvain Danto,Kathleen Richardson,J. David Musgraves,Kevin D. Dobson,Robert Birkmire

DOI: https://doi.org/10.1117/12.2040454

2014-01-01

Abstract:High-index-contrast optical devices form the backbone of densely integrated photonic circuits. While these devices are traditionally fabricated using lithography and etching, their performance is often limited by defects and sidewall roughness arising from fabrication imperfections. This paper reports a versatile, roll-to-roll and backend compatible technique for the fabrication of high-performance, high-index-contrast photonic structures in composition-engineered chalcogenide glass (ChG) thin films. Thin film ChG have emerged as important materials for photonic applications due to their high refractive index, excellent transparency in the infrared and large Kerr non-linearity. Both thermally evaporated and solution processed As-Se thin films are successfully employed to imprint waveguides and micro-ring resonators with high replicability and low surface roughness (0.9 nm). The micro-ring resonators exhibit an ultra-high quality-factor of 4 x 10(5) near 1550 nm wavelength, which represents the highest value reported in ChG micro-ring resonators. Furthermore, sub-micron nanoimprint of ChG films on non-planar plastic substrates is demonstrated, which establishes the method as a facile route for monolithic fabrication of high-index-contrast devices on a wide array of unconventional substrates.
Effect of Annealing Conditions on the Physio-Chemical Properties of Spin-Coated As2se3 Chalcogenide Glass Films

Yi Zou,Hongtao Lin,Okechukwu Ogbuu,Lan Li,Sylvain Danto,Spencer Novak,Jacklyn Novak,J. David Musgraves,Kathleen Richardson,Juejun Hu

DOI: https://doi.org/10.1364/ome.2.001723

2012-01-01

Optical Materials Express

Abstract:Thin film selenide glasses have emerged as an important material for integrated photonics due to its high refractive index, mid-IR transparency and high non-linear optical indices. We prepared high-quality As2Se3 glass films using spin coating from ethylenediamine solutions. The physio-chemical properties of the films are characterized as a function of annealing conditions. Compared to bulk glasses, as-deposited films possess a distinctively different network structure due to presence of Se-Se homopolar bonds and residual solvent. Annealing partially recovers the As-Se-3 pyramid structure and brings the film refractive indices close to the bulk value. Optical loss in the films measured at 1550 nm wavelength is 9 dB/cm, which was attributed to N-H bond absorption from residual solvent. (C)2012 Optical Society of America

Mid-infrared As2Se3 Chalcogenide Glass-on-silicon Waveguides

Planar Chalcogenide Glass Mid-Infrared Photonics

Demonstration of High-Q Mid-Infrared Chalcogenide Glass-On-Silicon Resonators

Rib and strip chalcogenide waveguides based on Ge-Sb-Se radio-frequency sputtered films

High-Q Mid-Infrared Chalcogenide Glass-On-Silicon Resonators for Spectroscopic Chemical Sensing

Chalcogenide Glass Planar Photonics: from Mid-Ir Sensing to 3-D Flexible Substrate Integration

Chalcogenide Coatings of Ge_15Sb_20S_65 and Te_20As_30Se_50

Chalcogenide Glass Microfibers for Mid-Infrared Optics

Chalcogenide glass based integrated photonics

Linear and third order nonlinear optical properties of GeSbS chalcogenide integrated waveguides

Low-loss Photonic Device in Ge-Sb-S Chalcogenide Glass.

Third Order Nonlinear Properties of GeSbS Chalcogenide Waveguides

Nonlinear Optical Properties of Integrated GeSbS Chalcogenide Waveguides

Third Order Nonlinear Properties of GeSbS Chalcogenide Waveguides (Poster)

Thermal Nanoimprint Fabrication Of Chalcogenide Glass Waveguide Resonators

Monolithic Chalcogenide Glass Waveguide Integrated Interband Cascaded Laser

Si-Cmos Compatible Materials and Devices for Mid-Ir Microphotonics

Germanium-On-Silicon Nitride Waveguides for Mid-Infrared Integrated Photonics

Thermal nanoimprint fabrication of chalcogenide glass waveguide resonators on nonconventional plastic substrates

Demonstration of High-Performance, Sub-Micron Chalcogenide Glass Photonic Devices by Thermal Nanoimprint

Effect of Annealing Conditions on the Physio-Chemical Properties of Spin-Coated As2se3 Chalcogenide Glass Films