Abstract:Silicon and germanium are waveguide core materials for Si-based Group-IV integrated photonic circuit applications in the mid-infrared (MIR) wavelength range defined here as 2 to 15 um. In particular, Si and Ge are transparent up to 8 and 15 μm respectively, thus offering applications in communications and the sensing of biochemical, medical, and environmental variables [1]. The major problem with the MIR transition is that the most dominant platform of SOI can be used only up to 4 μm due to the high absorption loss of silicon dioxide. Therefore alternative material platforms have to be utilized for longer wavelengths. Presently, the Ge-on-Si platform (known as GOS) has been demonstrated to be workable to 15 μm-thereby offering potential for MIR applications. However, the refractive index contrast between Ge (n=4.1) and Si (n=3.4) is considerably less than that of SOI. As a result, the bend radii in GOS must be considerably larger than those in SOI, causing the footprint of GOS on-chip sensor circuits to be generally larger than those of SOI, an unwanted increase in “real estate.” What is wanted is a better alternative Ge-waveguide platform that will provide a larger core-clad index contrast than GOS as well as useful transparency and smaller channel-bend radii. To achieve those goals, the new structure proposed and realized here is Germanium on Silicon Nitride (Ge-on-Si3N4) which is referred-to here as GON. The refractive index of silicon nitride is 2.4 and it is transparent up to ~7 μm. So the index contrast in GON is 1.7 compared to 0.7 in GOS. Our simulation results show that this structure can provide a more compact integrated network whose bend radii are only a few μm. Most importantly, we have developed a new and practical wafer bonding and layer transfer technique, reported here, to realize GON.

Low-loss chalcogenide waveguides on lithium niobate for the mid-infrared

Rib and strip chalcogenide waveguides based on Ge-Sb-Se radio-frequency sputtered films

Germanium-On-Silicon Nitride Waveguides for Mid-Infrared Integrated Photonics

Silicon-on-Insulator Waveguide Devices for Broadband Mid-Infrared Photonics

Low-loss Photonic Device in Ge-Sb-S Chalcogenide Glass.

Monolithic Chalcogenide Glass Waveguide Integrated Interband Cascaded Laser

Lithium–Niobate Channel Waveguide for the Realization of Long-Period Gratings

Mid-infrared As2Se3 Chalcogenide Glass-on-silicon Waveguides

Modeling and Fabrication of Ge-on-Si3N4 for Low Bend-Loss Waveguides

Mid-infrared Nonlinear Silicon Hybrid Waveguide with High Figure of Merit

Solution-processed chalcogenide glass for integrated single-mode mid-infrared waveguides

Chalcogenide Glass Microfibers for Mid-Infrared Optics

Single-scan Ultrafast Laser Inscription of Waveguides in IG2 for Type-I and Type-Ii Operation in the Mid-Infrared.

Long Low-Loss-Litium Niobate on Insulator Waveguides with Sub-Nanometer Surface Roughness

Low propagation loss silicon-on-sapphire waveguides for the mid-infrared

Planar Chalcogenide Glass Mid-Infrared Photonics

Thermal Nanoimprint Fabrication Of Chalcogenide Glass Waveguide Resonators

Low-loss Lithium Niobate on Insulator (LNOI) Waveguides of a 10 cm-length and a Sub-nanometer Surface Roughness

Mitigating waveguide loss in Ge-Sb-Se chalcogenide glass photonics

Low-Dose Ion Implanted Active Waveguides in Nd3+ Doped Near-Stoichiometric Lithium Niobate: Promising Candidates for Near Infrared Integrated Laser

Si-Cmos Compatible Materials and Devices for Mid-Ir Microphotonics