The influence of thermal treatment on the passivation of SiNx film and the dark current of p-i-n InGaAs detector

gaoqi cao,hengjing tang,xiumei shao,rui wang,qingfa li,jifeng cheng,tao li,xue li,haimei gong

DOI: https://doi.org/10.1117/12.2199226

2015-01-01

Abstract:In this paper, we focus on the influence of thermal treatment on the passivation of silicon nitride (SiNx) film of p-i-n InGaAs detector. In our experiment, the perimeter/area (P/A) test diodes are fabricated by using two different device processes, and the relationship between the dark current density and P/A is investigated. The results indicate that the thermal treatment in the vacuum can be able to improve the passivation SiNx film effect and thus suppress the perimeter-related current with the decrease of two orders of magnitude. Then the analysis of dark current source is carried out. The result shows that the sample with SiNx film through thermal treatment is composed of diffusion current and ohmic current, on the contrary, the other mainly consists of surface leakage current and diffusion current. It is illustrated that the passivation effect of SiNx was strengthened after thermal treatment and surface leakage current can be suppressed.