Abstract:The point-contact high-purity germanium detector (HPGe) has the advantages of low background, low energy threshold, and high energy resolution and can be applied in the detection of rare-event physics. However, the performance of HPGe must be further improved to achieve superior energy resolution, low noise, and long-term reliability. In this study, we combine computational simulations and experimental comparisons to deeply understand the passivation mechanism of Ge. The surface passivation effect is calculated and inferred from the band structure and density of interface states, and further confirmed by the minority carrier lifetime. The first-principles method based on the density functional theory was adopted to systematically study the lattice structure, band structure, and density of state (DOS) of four different systems: Ge–H, Ge–Ge-NH2, Ge-OH, and Ge-SiOx. The electronic characteristics of the Ge (100) unit cell with different passivation groups and Si/O atomic ratios were compared. This shows that H, N, and O atoms can effectively reduce the surface DOS of the Ge atoms. The passivation effect of the SiOx group varied with increasing O atoms and Si/O atomic ratios. Experimentally, SiO and SiO2 passivation films were fabricated by electron beam evaporation on a Ge substrate, and the valence state of Si and resistivity was measured to characterize the film. The minority carrier lifetime of Ge-SiO2 is 21.3 μs, which is approximately quadruple that of Ge-SiO. The passivation effect and mechanism are discussed in terms of hopping conduction and surface defect density. This study builds a relationship between the passivation effect and different termination groups, and provides technical support for the potential passivation layer, which can be applied in Ge detectors with ultralow energy thresholds and especially in HPGe for rare-event physics detection experiments in future.

Investigation of the Lower Temperature Sio2 Surface Passivation Technology on Inas/Gasb Superlattice Detectors

Investigation of a Noise Source and Its Impact on the Photocurrent Performance of Long-Wave-infrared InAs/GaSb Type-Ii Superlattice Detectors.

Impact Of Sinx Passivation On The Surface Properties Of Ingaas Photo-Detectors

Characterization of a Mass-Produced SiPM at Liquid Nitrogen Temperature for CsI Neutrino Coherent Detectors

Suppression of Dark Current in Geox-Passivated Germanium Metal-Semiconductor-Metal Photodetector by Plasma Post-Oxidation

Passivation of Si(Li) detectors operated above cryogenic temperatures for space-based applications

The Study of the Passivation Technology for Bare HPGe Detector Working in LN2

Investigation of low frequency noise-current correlation for the InAs/GaSb type-II superlattice long-wavelength infrared detector

Silicon Surface Passivation for Silicon-Colloidal Quantum Dot Heterojunction Photodetectors.

Wet Etching and Passivation of GaSb-based Very Long Wavelength Infrared Detectors

Low Leakage of In0.83Ga0.17As Photodiode with Al2O3/SiNx Stacks

Long-Wavelength InAs/GaSb Superlattice Detectors With Low Dark Current Density Grown by MOCVD

High-temperature and reliability performance of 4H-SiC Schottky-barrier photodiodes for UV detection

Normal-incidence SiGe/Si photodetectors with different buffer layers

Study of Temperature Influence on CsI(Tl) Detector in High Temperature Gas-cooled Reactor Pebble-flow Detection System

Study of Junction Performance in Mid-Wavelength HgCdTe Photodiodes by Laser Beam-Induced Current Microscope

Evaluation of the passivation effect and the first-principles calculation on surface termination of germanium detector

Low dark current Sb-based short-wavelength infrared photodetector

Fabrication technology and characterization of PTCDA/p-Si photo-electronic detector

On‐Chip Room‐Temperature Operated Short‐Wavelength‐Infrared Si:S Photodetector with a Vertical Junction

Growth and Dark Current Analysis of GaSb- and InP-Based Metamorphic In0.8Ga0.2As Photodetectors