Abstract:A GeSn/Ge multiple-quantum-well (MQW) p-i-n photodiode structure was proposed for simultaneously realizing high detectivity photo detection with low dark current and effective optical modulation based on the quantum confined Stark (QCSE) effect. The MQW stacks were grown on a 300-mm Ge-buffered Si substrate using reduced pressure chemical vapor deposition (RPCVD). GeSn/Ge MQW p-i-n photodiodes with varying mesa diameters were fabricated and characterized. An ultralow dark current density of 16.3 mA/cm2 at -1 V was achieved as expected due to the low threading dislocation density (TDD) in pseudomorphic GeSn layer. Owing to the ultralow dark current density and high responsivity of 0.307 A/W, a high specific detectivity of 1.37×1010 cm·Hz1/2/W was accomplished at 1,550 nm, which is comparable with commercial Ge and extended-InGaAs photodetectors. Meanwhile, the bias voltage-dependent photo response was investigated from 1,700 to 2,200 nm. The extracted effective absorption coefficient of GeSn/Ge MQW shows a QCSE behavior with electric field-dependent exciton peaks from 0.688 to 0.690 eV. An absorption ratio of 1.81 under -2 V was achieved at 2 μm, which shows early promise for effective optical modulation. The high frequency response was calculated theoretically, and the predicted 3-dB bandwidth for the photodiode with a mesa diameter of 30 μm could reach 12 GHz at -2 V.

Normal-incidence SiGe/Si photodetectors with different buffer layers

Photo Detection and Modulation from 1,550 to 2,000 Nm Realized by a GeSn/Ge Multiple-Quantum-well Photodiode on a 300-Mm Si Substrate

Low Dark Current Ge/Si Photodetector Grown by Selective Epitaxial Growth

SiGe/Ge heterojunction infrared detector

High-performance Ge P-I-n Photodetector on Si Substrate

GeSn P-I-n Photodetectors with GeSn Layer Grown by Magnetron Sputtering Epitaxy

Selective Epitaxial Germanium on Silicon-on-insulator High Speed Photodetectors Using Low-Temperature Ultrathin Si0.8Ge0.2 Buffer

Photocurrent Property of GaN on the Si Photodetector with a Nearly Polycrystalline Α-Al2o3 Buffer Layer

High-efficiency Normal-Incidence Vertical P-I-n Photodetectors on a Germanium-on-insulator Platform

High-Responsivity Gesn Short-Wave Infrared P-I-N Photodetectors

Normal-incidence Ge Quantum-Dot Photodetectors at 1.5 Μm Based on Si Substrate

Photoelectric Properties of Si-Si1-Xgex-Ge Heterostructures for Infrared Detector

High Efficiency Ultra-Thin Normal-Incidence Ge-On-Si Photodetector Based on Optical Metasurface

Grating and Hole-Array Enhanced Germanium Lateral P-I-n Photodetectors on an Insulator Platform

Silicon-based long wavelength photodetectors

48 GHz High-Performance Ge-on-SOI Photodetector with Zero-Bias 40 Gbps Grown by Selective Epitaxial Growth

Fabrication and Characteristics of Si-based Ge Waveguide Photodetectors

Normal Incidence Silicon Doped P-Type Gaas/Algaas Quantum-Well Infrared Photodetector on (111)A Substrate

Impact of Local Strain From Selective Epitaxial Germanium With Thin Si/SiGe Buffer on High-Performance p-i-n Photodetectors With a Low Thermal Budget

Characteristics of Si-based Metal-Germanium-metal Photodectectors