Abstract:Recently, all-inorganic two-dimensional (2D) Ruddlesden-Popper (RP) halide perovskites have drawn much attention due to their excellent stability in ambient air. However, their electronic and optical performance resulting from a wide bandgap and low carrier mobility have hindered their use in photodetectors. To overcome these limitations, in this work, taking advantage of hexagonal indium selenide (InSe) with a high electron mobility, we construct an atomically thin heterostructure. Density-functional-theory (DFT) calculations of the electronic and optical properties are performed for these heterostructures. The results demonstrate that the photodetection response spectrum of the heterostructures is significantly broadened as the bandgap decreases from 2.17 to 0.40 eV for the InSe/Cs2SnI2Cl2 heterostructure. Moreover, the electron effective mass, m(e)*, is reduced from 1.13 m(0) to 0.41 m(0) for the InSe/Cs2GeI2Cl2 heterostructure. The significant reductions in both the band gap and effective mass are determined to be related to the type-II band alignment, which favors the carrier separation at the interface. The physical mechanisms related to the usage of this material in photodetectors are also discussed. The proposed III- VI semiconductor InSe and all-inorganic 2D RP perovskite Cs2XI2Cl2 (X = Pb, Sn, and Ge) heterostructures provide challenges and opportunities for designing high-performance photodetectors.

Photoelectric Properties of Si-Si1-Xgex-Ge Heterostructures for Infrared Detector

SiGe/Ge heterojunction infrared detector

Ultrafast visible-infrared photodetector based on the SnSe<sub>2</sub>/Bi<sub>2</sub>Se<sub>3</sub> heterostructure

Self-power, Multiwavelength Photodetector Based on Sn-doped Ge Quantum Dots / Hexagonal Silicon Nanowires Heterostructures

Photo Detection and Modulation from 1,550 to 2,000 Nm Realized by a GeSn/Ge Multiple-Quantum-well Photodiode on a 300-Mm Si Substrate

Microstructure and Optic-Electric Performance of Sige/Si Heterostructures

Fabrication and characterization of SiC/Ge/graphene heterojunction with Ge micro-nano structures

A SiGe/Si Nanostructure with Graphene Absorbent for Long Wavelength Infrared Detection

Construction of PtSe2/Ge heterostructure-based short-wavelength infrared photodetector array for image sensing and optical communication applications.

THE PROGRESSES IN THE STUDY ON Si BASED HETEROSTRUCTURE MATERIALS FOR PHOTODETECTOR

Low-cost High-performance P-Gase/i-gesn/n-goi Heterojunction Photodiode for Visible to Short-wave Infrared Multispectral Detection

1.3, 1.55 Μm Photodetector Based on Ge/GaAs Hetero-Integration Prepared by MOCVD

Broad-spectrum and ultrasensitive photodetectors based on GeSe/SnS2 heterostructures with type-III band alignment

Study of Si-Based Multilayer Ge Quantum Dots Near-Infrared Photodetector

Normal-incidence SiGe/Si photodetectors with different buffer layers

High-performance Photodetector Based on InSe/Cs2XI2Cl2 (X = Pb, Sn, and Ge) Heterostructures

Theoretical analysis of Si1¿x¿yGexCy near-infrared photodetectors

Staircase band gap Si1-xGex/Si photodetectors

High-performance Broadband Photoresponse of Self-Powered Mg2Si/Si Photodetectors

Si-based Ge Quantum Dot Infrared Photodetectors

The GeSe/SnSe heterojunction photodetector with self-powered characteristics and high infrared response performance