Abstract:Due to their internal gain mechanism, emerging nanomaterial-based infrared phototransistors show significant promise for highly sensitive detection; however, they usually suffer from high dark current (Idark) and thus high noise, which restricts the actual detection capability of the detector. Here, a semiconducting carbon nanotube (CNT) film-based phototransistor is proposed with an ultralow Idark and a high response through the adoption of stacked ZnO/PbS colloidal quantum dot heterojunctions as the photogate to absorb the infrared photons and generate a photovoltage. Solution-derived semiconducting CNTs with diameters ranging from 0.8 to 1.1 nm are utilized to create a network film that serves as the active channel of the transistor and provides an off-state current as low as approximate to 50 fA; this enables an ultralow dark current (pA level) in the infrared phototransistor. By tuning the back-gate bias, the synergistic modulation is demonstrated of the sensor response and electronic noise and achieve a high detectivity of 5.7 x 1013 Jones under an incident power density of 0.81 nW cm-2 and 1300 nm infrared radiation. These findings provide a promising approach for attaining weak light infrared detection based on nanomaterial-based photodetectors. This paper demonstrates a heterojunction-gated infrared phototransistor featuring a PIN photosensitizer as the absorbing module and small-diameter semiconducting carbon nanotubes as the conducting channels. These phototransistors exhibit a dark current at the pA level and a high detectivity of 5.7 x 1013 Jones at an incident power density of 0.81 nW cm-2 under 1300 nm radiation, highlighting their potential for future nanomaterial-based weak-light infrared detection. image

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