Abstract:Exploring the crucial role of dark current in 2D infrared optoelectronics, this review discusses the dark current generation mechanisms and summarizes the main methods for suppressing dark current in 2D infrared photodetectors. Diverse device structures and working mechanisms based on various dark current suppression strategies are discussed. Conclusions and future perspectives are delivered as a guideline for this thriving field. Narrow‐bandgap 2D materials and semimetals, for example, graphene, black phosphorus (BP), tellurium (Te), and some novel transition metal dichalcogenides (TMDs), have been demonstrated to be promising building blocks for constructing next‐generation state‐of‐the‐art infrared (IR) photodetectors. However, these devices suffer from a significant dark current, primarily attributed to the intrinsic thermal excitation‐induced high carrier concentration. Suppressing the dark current is an essential issue in pursuing higher specific detectivity of IR photodetectors. Here, the authors demonstrate recent advances in suppressing dark current for 2D IR photodetectors. First, a brief insight into the dark current composition and mechanisms of 2D IR photodetectors is illustrated. Then, the varied band alignment for blocking dark current by the interfacial barrier is discussed. Next, localized electric field modulation by applying a gate voltage and ferroelectric materials is discussed. This method can effectively tune the concentration and distribution of carriers in the device conductive channel. Following that, interfacial engineering is summarized, by which interfacial defects can be passivated and interlayer defect‐induced dark current can be suppressed. Finally, the challenges and an outlook are delivered for developing state‐of‐the‐art IR photodetectors.

Suppressing the Dark Current in Quantum Dot Infrared Photodetectors by Controlling Carrier Statistics

Suppression of Dark Current Through Barrier Engineer for Solution-Processed Colloidal Quantum-Dots Infrared Photodetectors

Colloidal PbS Quantum Dot Photodiode Imager with Suppressed Dark Current

Origin and suppression of dark current for high-performance colloidal quantum dot short-wave infrared photodetectors

Suppression of the dark current in PbS quantum dot infrared photodetectors through the introduction of a CuInSeS interfacial layer

Trap-Assisted Tunneling in PbS Colloidal Quantum Dots Photodetector

High-Performance Colloidal Quantum Dot Photodiodes Via Suppressing Interface Defects

Excess Passivation of Large Colloidal Quantum Dots to Reduce Dark-Current Density for Near-Infrared Detection

On the Mechanism to Suppress Dark Current Via Blending with an All-Inorganic Perovskite Precursor in Colloidal Quantum Dot Photodetectors

Dark Current Mechanisms and Suppression Strategies for Infrared Photodetectors Based on Two‐Dimensional Materials

On the mechanism to suppress dark current via blending all-inorganic pervoskite precursor for colloidal quantum dots photodetectors

Double‐ended Passivator Enables Dark‐current‐suppressed Colloidal Quantum Dot Photodiodes for CMOS‐integrated Infrared Imagers

Atomic Scale Composite Oxides Infiltration to Quantum Dot Photodetector with Ultralow Dark Current

Optimization of Charge Carrier Extraction in Colloidal Quantum Dots Short‐Wave Infrared Photodiodes through Optical Engineering

P‐134: Organic Buffer Layer Depressed Dark Current of Short‐Wave Infrared PbS Quantum Dot Photodetector

Excess PbBr2 Passivation of Large PbS Colloidal Quantum Dots to Reduce Dark-Current Density for Near-Infrared Detection

Self‐Assembly PbS Quantum Dot‐Conjugated Polymer Hybrid‐Layered Phototransistor Enables SWIR Photodetection with High Detectivity

Impact of Ligands on the Performance of PbS Quantum Dot Visible–Near‐Infrared Photodetectors

Dark Currents of GaAs/AlGaAs Quantum-Well Infrared Photodetectors

A Near-Infrared Photodetector Based on Carbon Nanotube Transistors Exhibits Ultra-Low Dark Current Through Field-Modulated Charge Carrier Transport.

PbS Colloidal Quantum Dots Patterning Technique with Low Vertical Leakage Current for the Photodetection Applications