Abstract:We report on a comprehensive temperature dependent dark current study of high-quality InGaAs/GaAs multi quantum well waveguide photodetectors monolithically integrated on silicon. They are integrated through metalorganic vapor-phase selective-area epitaxial growth in a 300-mm CMOS pilot line. Defects resulting from the metamorphic growth of III-V devices on Si make these devices susceptible to different leakage mechanisms at higher operating temperatures. For the high-temperature operation of complex photonics-electronics integrations, understanding the leakage mechanisms of the devices has critical significance. This will help to optimize designs promptly and ensure the reliability and longevity of such devices under extreme operating conditions. The photodetector devices exhibit dark currents below 1 pA, at room temperature and –1 V bias voltage, limited by the noise floor of the measurement setup. To resolve the different leakage mechanisms contributing to the dark current, the devices were measured at elevated temperatures and the results were cross-validated with device simulations. The devices exhibited very low dark currents, with a median below 0.1 nA at 195 °C, suggesting very high-quality material growth. Through device models, leakage mechanisms related to Shockley-Read-Hall (SRH) recombination at bulk volume defects are found to be the main factor contributing to the dark current. The surface SRH recombination is found to be limited, yet affecting the forward bias dark current due to the shortening of the diffusion paths of the majority carriers. Also, the device model shows that the actual dark currents at room temperature can be as low as 0.01 pA, more than 1-order lower than the measured levels. This study emphasizes the high quality of the III-V nano-ridge waveguide devices grown on Si, which can potentially expand the capabilities of silicon photonics platforms further.

Surface Leakage Reduction in MSM InGaAs Photodetector on III–V CMOS Photonics Platform

Improvement of surface leakage current of 2.6 µm InGaAs photodetectors by using inductive coupled plasma chemical vapor deposition technology

Leakage Mechanisms of sub-pA InGaAs/GaAs Nano-Ridge Waveguide Photodetectors Monolithically Integrated on a 300-mm Si Wafer

Low Leakage of In0.83Ga0.17As Photodiode with Al2O3/SiNx Stacks

Effects of an Anodic Oxide Passivation Layer on Mesa-Type InGaAs (PIN) Photodetectors

Photocarrier transport reconstruction and dramatical performance enhancement in ultrawide-bandgap ε-Ga 2 O 3 photodetectors via surface defect passivation

Barrier layer effect on photoelectric properties of MSM photodetectors based on black silicon

Photocarrier Transport Reconstruction and Dramatical Performance Enhancement in Ultrawide-Bandgap Ε-Ga2o3 Photodetectors Via Surface Defect Passivation

Suppression of Dark Current in Geox-Passivated Germanium Metal-Semiconductor-Metal Photodetector by Plasma Post-Oxidation

Photo Detection and Modulation from 1,550 to 2,000 Nm Realized by a GeSn/Ge Multiple-Quantum-well Photodiode on a 300-Mm Si Substrate

Active Surface Passivation for mesa type short-wave infrared InGaAs Photodetectors

Suppressing the Dark Current in Quantum Dot Infrared Photodetectors by Controlling Carrier Statistics

Enhanced quantum efficiency and reduction of reflection for MSM photodetectors with nano-structured surface

Analysis of the Influence and Mechanism of Sulfur Passivation on the Dark Current of a Single GaAs Nanowire Photodetector.

Ultralow-Noise Nano-Ag/Amorphous Ga 2 O 3 UV Photodetector Realized by Introducing Local Schottky Junctions

An MSM photodetector based on an InGaO/TiO2 heterojunction for high-performance UV detection

Influence of Two-Tier Structuring on the Performance of Black Silicon-Based MSM Photodetectors

Silicon Surface Passivation for Silicon-Colloidal Quantum Dot Heterojunction Photodetectors.

AlGaN-based metal–semiconductor–metal photodiodes fabricated with nonplanar structure geometry for ultraviolet light detection

Status and Outlook of Metal–Inorganic Semiconductor–Metal Photodetectors

Strong enhancement of photoresponsivity with shrinking the electrodes spacing in few layer GaSe photodetectors