Abstract:We report on a comprehensive temperature dependent dark current study of high-quality InGaAs/GaAs multi quantum well waveguide photodetectors monolithically integrated on silicon. They are integrated through metalorganic vapor-phase selective-area epitaxial growth in a 300-mm CMOS pilot line. Defects resulting from the metamorphic growth of III-V devices on Si make these devices susceptible to different leakage mechanisms at higher operating temperatures. For the high-temperature operation of complex photonics-electronics integrations, understanding the leakage mechanisms of the devices has critical significance. This will help to optimize designs promptly and ensure the reliability and longevity of such devices under extreme operating conditions. The photodetector devices exhibit dark currents below 1 pA, at room temperature and –1 V bias voltage, limited by the noise floor of the measurement setup. To resolve the different leakage mechanisms contributing to the dark current, the devices were measured at elevated temperatures and the results were cross-validated with device simulations. The devices exhibited very low dark currents, with a median below 0.1 nA at 195 °C, suggesting very high-quality material growth. Through device models, leakage mechanisms related to Shockley-Read-Hall (SRH) recombination at bulk volume defects are found to be the main factor contributing to the dark current. The surface SRH recombination is found to be limited, yet affecting the forward bias dark current due to the shortening of the diffusion paths of the majority carriers. Also, the device model shows that the actual dark currents at room temperature can be as low as 0.01 pA, more than 1-order lower than the measured levels. This study emphasizes the high quality of the III-V nano-ridge waveguide devices grown on Si, which can potentially expand the capabilities of silicon photonics platforms further.

Dark Current Mechanisms Investigation of Surface Passivation InAs/GaSb Photodiodes at Low Temperatures

Dark Current Characterization And Simulation For In0.78ga0.22as Pin Photodetectors

Suppression of Dark Current in Geox-Passivated Germanium Metal-Semiconductor-Metal Photodetector by Plasma Post-Oxidation

Growth and Dark Current Analysis of GaSb- and InP-Based Metamorphic In0.8Ga0.2As Photodetectors

Analysis of Dark Currents and Deep Level Traps in InP- and GaAs-based in 0.83 Ga 0.17 As Photodetectors

Deep-Level Traps Induced Dark Currents In Extended Wavelength Inxga1-Xas/Inp Photodetector

Suppressing the Dark Current in Quantum Dot Infrared Photodetectors by Controlling Carrier Statistics

Leakage Mechanisms of sub-pA InGaAs/GaAs Nano-Ridge Waveguide Photodetectors Monolithically Integrated on a 300-mm Si Wafer

Low Leakage of In0.83Ga0.17As Photodiode with Al2O3/SiNx Stacks

Investigation of a Noise Source and Its Impact on the Photocurrent Performance of Long-Wave-infrared InAs/GaSb Type-Ii Superlattice Detectors.

Low dark current Sb-based short-wavelength infrared photodetector

Dark Current Mechanisms and Suppression Strategies for Infrared Photodetectors Based on Two‐Dimensional Materials

Analysis of Dark Count Mechanisms of 4H-SiC Ultraviolet Avalanche Photodiodes Working in Geiger Mode

Dark-Current-Blocking Mechanism in BIB Far-Infrared Detectors by Interfacial Barriers

Dark Current in Long-Wave Cascade-Transport Infrared Up-Converters

Effect of "M" and "B" superlattice barrier layers on dark current of long-wavelength infrared detectors

Long-Wavelength InAs/GaSb Superlattice Detectors With Low Dark Current Density Grown by MOCVD

Enhanced Low-Noise Gain from InAs Avalanche Photodiodes with Reduced Dark Current and Background Doping

Probing into Reverse Bias Dark Current in Perovskite Photodiodes: Critical Role of Surface Defects

Effects of different passivation layers on RV characteristics of long-wave HgCdTe gate-controlled diodes

Exploiting the Correlation Between 1/f Noise-Dark Current in PIN InGaAs Photodetectors