Abstract:Abstract The InAs/GaSb superlattice infrared detector has been developed with tremendous effort. However, the performance of it, especially long-wavelength infrared detectors (LWIR), is still limited by the electrical performance and optical quantum efficiency (QE). Forcing the active region to be p -type through proper doping can highly improve QE, and the gating technique can be employed to greatly enhance electrical performance. However, the saturation bias voltage is too high. Reducing the saturation bias voltage has broad prospects for the future application of gate voltage control devices. In this paper, we report that the gated P + – π –M–N + InAs/GaSb superlattice long-wavelength infrared detectors exhibit different π region doping levels that have a reduced minimum saturation bias at − 10 V with a 200-nm SiO 2 layer after a simple and effective anodic vulcanization pretreatment. The saturation gate bias voltage is much lower than − 40 V that reported with the same thickness of a 200-nm SiO 2 passivation layer and similar structure. The optical and electrical characterization indicates that the electrical and optical performance of the device would be weakened by excessive doping concentration. At 77 K, the 50% cutoff wavelength of the device is about 8 μm, the 100% cutoff wavelength is 10 μm, the maximum quantum efficiency is 62.4%, the maximum of responsivity is 2.26 A/W at 5 μm, and the maximum RA of the device is 1259.4 Ω cm 2 . Besides, the specific detectivity of Be 780 °C-doped detector without gate electrode exhibits a peak of 5.6 × 10 10 cm Hz 1/2 /W at 5 μm with a 70-mv reverse bias voltage, which is more than three times that of Be 820 °C-doped detector. Moreover, the peak specific detectivity could be further increased to 1.3 × 10 11 cm Hz 1/2 /W at 5 μm with a 10-mv reserve bias voltage that has the bias of − 10 V at the gate electrode.

Sulfide Treatment Passivation of Mid-/Long-wave Dual-Color Infrared Detectors Based on Type-Ii InAs/GaSb Superlattices

Wet Etching and Passivation of GaSb-based Very Long Wavelength Infrared Detectors

GaAs/AlGaAs Quantum-Well Infrared Photodetectors on GaAs-on-Si Substrates

Material and device characterization of Type-II InAS/GaSb superlattice infrared detectors

Long-Wavelength InAs/GaSb Superlattice Detectors With Low Dark Current Density Grown by MOCVD

Long and Very Long Wavelength InAs/InAsSb Superlattice Complementary Barrier Infrared Detectors

Long-wavelength InAs/GaSb superlattice double heterojunction infrared detectors using InPSb/InAs superlattice hole barrier

MBE growth of mid-wavelength type II InAs/InAsSb superlattice photodetectors with wet etching and Al 2 O 3 passivation

InAs/GaSb Type-II superlattice (T2SL) photodetector operating in the very-long wavelength infrared (VLWIR) spectral domain

High-Performance Midwave Type-II Superlattice Infrared Photodetectors With a Stepped InAs/GaSb Absorber

High-Performance Anodic Vulcanization-Pretreated Gated P+–π–M–N+ InAs/GaSb Superlattice Long-Wavelength Infrared Detector

InAs/InAsSb Type-II Strained-Layer Superlattice Infrared Photodetectors

Investigation of low frequency noise-current correlation for the InAs/GaSb type-II superlattice long-wavelength infrared detector

Mid-wavelength high operating temperature barrier infrared detector and focal plane array

High performance photodiodes based on InAs/InAsSb type-II superlattices for very long wavelength infrared detection

InP-based High-Performance Extended Short Wavelength P-B-n Infrared Photodetector with InGaAs/GaAsSb Type-Ii Superlattice Absorption Layer

Long wavelength InAs/InAsSb superlattice barrier infrared detectors with p-type absorber quantum efficiency enhancement

Growth and characterization of InGaAs/InAsSb superlattices by metal-organic chemical vapor deposition for mid-wavelength infrared photodetectors

Silicon Surface Passivation for Silicon-Colloidal Quantum Dot Heterojunction Photodetectors.

Short-period InAsSb-based strained layer superlattices for high quantum efficiency long-wave infrared detectors

Dicarboxylic Acid‐Assisted Surface Oxide Removal and Passivation of Indium Antimonide Colloidal Quantum Dots for Short‐Wave Infrared Photodetectors