Studies On Different Passivation On Inas/Gasb Type-Ii Superlattice Photodetectors

Yurong Cui,Jianxin Chen,Zhicheng Xu,Jiajia Xu,Yi Zhou,Li He
DOI: https://doi.org/10.1117/12.2247485
2016-01-01
Abstract:As a promising candidate for the next generation of infrared detection and imaging, more and more studies are focused on the type-II InAs/GaSb superlattice recently. In this paper, we studied different passivation techniques and the dielectric film-semiconductor interface properties for InAs/GaSb superlattice photodetectors. We found that with Si3N4 passivation, the R(0)A of the superlattice detector decreased from 2.8x10(5)Omega cm(2) to 12 Omega cm(2) at 80K after a process of rapid thermal annealing (RTA) at 250 degrees C for 60s. Excessive surface charge of 6.15x10(12)cm(-2) was measured from a gate-controlled structure. Meanwhile, the SiO2 passivated devices can sustain its electrical performance after the RTA process.
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