Abstract:Infrared(IR)photo detectors based on InAs/GaSb type II superlattice have developed quickly in recent years. Many groups show great interest in InAs/GaSb superlattice detector for its superiors as high quantum efficient, high working temperature, high uniformity and low dark current densities. Inductively coupled plasma(ICP) etching of GaSb and InAs/ GaSb superlattices were performed using Cl2/Ar/CH4/H2. This paper introduceste inductively coupled plasma( ICP) etching of Inas/GaSb with SiO2 mask by the Cl2/Ar/CH4/H2 mixed-gas process. The effects of process parameters such as gas combination, ICP and RF power on the etch rate and quality of InAs/GaSb It is found that the ratio of Cl2 flow rate significantly affects the etch rate, due to the trade-off between physical and chemical component of etching. The etch rate of InAs/GaSb increases with the increase of percent of Cl2, there will InClx remains in the etching channel when the etching depth exceeded 2μm, which can stop the etching going on. This phenomenon can be eliminated by decrease the Cl2 ratio,to make sure the etching depth reach 6μm under a certain low etching rate. The surface morphology and SEM of the superlattice material after etching shows that dry etching morphology is better than wet etching.After the electrode is grown, the superlattice chip have a good diode characteristic curve.

ICP Etching for InAs-based InAs/GaAsSb Superlattice Long Wavelength Infrared Detectors

Wet Etching and Passivation of GaSb-based Very Long Wavelength Infrared Detectors

GaAs/AlGaAs Quantum-Well Infrared Photodetectors on GaAs-on-Si Substrates

High Performance InAs/GaAsSb Superlattice Long Wavelength Infrared Photo-Detectors Grown on InAs Substrates

Effects of Etching Processes on Surface Dark Current of Long-Wave Infrared InAs/GaSb Superlattice Detectors

Fabrication and Characterization of InAs/GaSb Strained Layer Superlattice Infrared Focal Plane Array Detectors

Very Long-Wavelength (~20μm) InAs/GaSb Superlattice Infrared Detector with Double InSb-like Interfaces

Schematic of InAs/GaSb superlattice VLWIR photodide with PIN structure and the current responsivity spectrum of the SL photodiode. Interface optimization and fabrication of InAs/GaSb type II superlattice for very long wavelength infrared photodetectors

Long-wavelength InAs/GaSb superlattice double heterojunction infrared detectors using InPSb/InAs superlattice hole barrier

Molecular Beam Epitaxy Growth Of High Quality Inas/Gasb Type-Ii Superlattices For Long Wavelength Infrared Detection

Light-harvesting for High Quantum Efficiency in InAs-based InAs/GaAsSb Type-Ii Superlattices Long Wavelength Infrared Photodetectors

Sulphur passivation of type Ⅱ InAs/GaSb superlattice MWIR photodiodes

Growth and Fabrication of InAs/GaSb Type II Superlattice Mid-Wavelength Infrared Photodetectors

Inductively Coupled Plasma(icp) Dry Etching of Type II InAs/GaSb Superlattice for Focal Plane Arrays

Sulphur passivation of type II InAs/GaSb superlattice MWIR photodiodes

Design and Passivation of Short-/Mid-wavelength Dual-Color Infrared Detector Photodiodes Based on InAs/GaSb Type II Superlattice

Mid-wavelength infrared InAs/GaSb type Ⅱ superlattice detectors

Long-Wavelength InAs/GaSb Superlattice Detectors With Low Dark Current Density Grown by MOCVD

Studies on the surface treatment of InAs/GaSb type-II super-lattice long-wave infrared detectors

Demonstration of MOCVD-Grown Long-Wavelength Infrared InAs/GaSb Superlattice Focal Plane Array

Short-period InAsSb-based strained layer superlattices for high quantum efficiency long-wave infrared detectors