Abstract:In this letter, we report the first demonstration of a 4H-SiC p-i-n ultraviolet (UV) avalanche photodiode (APD) with its p-layer formed by Al implantation. In order to alleviate the electric field crowding around mesa edge, an appropriately doped p sub-layer with high lateral resistance is added beneath the top p+ contact layer, which are both formed by Al implantation into a lightly doped n-SiC layer. The room temperature (RT) dark current of the APD remains lower than 0.1 pA when reverse bias is <;200 V, and then increases by several orders of magnitude before avalanche breakdown occurs at ~260 V. A maximum avalanche gain larger than 103 can be achieved, while the related breakdown voltage exhibits a positive temperature coefficient of ~25 mV/°C. The activation energy of dark current as well as the relationship between the dark current and the device active area is studied, which suggests that bulk leakage assisted by residual implantation-induced deep-level defects is the dominant source of dark current at high bias. The RT maximum quantum efficiency of the APD under 0 V bias is 44.4% at 270 nm with a UV/visible rejection ratio larger than 104.

Surface Passivation of 1550nm AlxInyAsSb Avalanche Photodiode

Surface Passivation of Random Alloy AlGaAsSb Avalanche Photodiode

Sulphur passivation of type II InAs/GaSb superlattice MWIR photodiodes

Sulphur passivation of type Ⅱ InAs/GaSb superlattice MWIR photodiodes

Studies On Different Passivation On Inas/Gasb Type-Ii Superlattice Photodetectors

Sulfide Treatment Passivation of Mid-/Long-wave Dual-Color Infrared Detectors Based on Type-Ii InAs/GaSb Superlattices

Impact Of Sinx Passivation On The Surface Properties Of Ingaas Photo-Detectors

Comparative Study of Si3N4-PECVD and Al2O3-ALD Surface Passivation in T-Shaped Gate InAlAs/InGaAs InP Based HEMTs

Effects of an Anodic Oxide Passivation Layer on Mesa-Type InGaAs (PIN) Photodetectors

Characteristics of Thin InAlAs Digital Alloy Avalanche Photodiodes.

Al0.1Ga0.9N P-I-n Ultraviolet Avalanche Photodiodes with Suppressed Surface Leakage Current and Uniform Avalanche Breakdown.

The Influence of Surface Passivation on Dark Current Contributing Mechanisms of the InAs/GaSb Superlattice

Active Surface Passivation for mesa type short-wave infrared InGaAs Photodetectors

4H-Sic P-I-n Ultraviolet Avalanche Photodiodes Obtained by Al Implantation

Al0.1Ga0.9N P-I-n Ultraviolet Avalanche Photodiodes with Avalanche Gain over 106

The Surface Passivation on the Optical and Surface Properties of InP

Wet Etching and Passivation of GaSb-based Very Long Wavelength Infrared Detectors

Discrimination Voltage and Overdrive Bias Dependent Performance Evaluation of Passively Quenched Sic Single-Photon-Counting Avalanche Photodiodes

Effects of Etching Processes on Surface Dark Current of Long-Wave Infrared InAs/GaSb Superlattice Detectors

Low Leakage of In0.83Ga0.17As Photodiode with Al2O3/SiNx Stacks

The effect of (NH4)2Sx passivation on the (311)A GaAs surface and its use in AlGaAs/GaAs heterostructure devices