Abstract:Visualization of material composition across numerous grains and complicated networks of grain boundaries using image processing techniques can reveal fresh insights into the material’s structural evolution and upcoming functional capabilities for a variety of applications. Three-dimensional integrated circuits (3D IC) are the most practical technology for increasing transistor density in future semiconductor applications. One of the key benefits of 3D IC is heterogeneous integration, which results in shorter interconnections due to vertical stacking. However, one of the most significant challenges in building higher-density microelectronics devices is the stress generated by material mismatches in the coefficient of thermal expansion (CTE). The purpose of this study is to analyze grain boundary migration caused by variations in strain energy density using image processing methods for 3D grain continuum modeling. Temperature changes in polycrystalline structures generate stresses and strain energy densities, which may be calculated using FEM software. Single crystal Cu’s anisotropic elastic properties are twisted to suit grain orientation in space and each grain is treated as a single crystal. Grain boundary speeds are calculated using a simple model that relates grain boundary mobility to variations in strain energy density on both sides of grain boundaries. Using the grain continuum model, researchers will be able to investigate the effect of thermally generated stresses on grain boundary motion caused by atomic flux driven by strain energy. Using finite-element modeling of the grain structure in a Through Silicon Via, the stress effect on grain boundaries caused by grain rotation due to CTE mismatch was investigated (TSV). The structure must be modeled using a scanning electron microscopes Electron Backscatter Diffraction (EBSD) image (SEM). Grain growth and subsequent grain boundary rotation can be performed using the appropriate extrapolation method to measure their influence on stress and, as a result, the TSV’s overall reliability.

3D Tcad Modeling for Stress Management in Through Silicon Via (tsv) Stacks

Modeling Simplification for Thermal Mechanical Stress Analysis of TSV Interposer Stack

Multi-physics characterization of through silicon vias (TSV) in the presence of a periodic EMP

Comprehensive study of the impact of TSV induced thermo-mechanical stress on 3D IC device performance

Electrothermal modelling of through silicon via (TSV) interconnects

Electrothermal modelling and characterisation of submicron through-silicon carbon nanotube bundle vias for three-dimensional ICs

Finite Element Stress Analysis Of 3d Tsv Stack Subject To Large Temperature Loading

Sensitivity analysis of through-silicon via (TSV) interconnects for 3-D ICs

The thermal stress analysis in 3D IC integration with TSV interposer

System-Level Analysis of 3D ICs with Thermal TSVs

Multiphysics Characterization of Polymer‐filled Through‐silicon Vias (pf‐tsvs) for Three‐dimensional Integration

Impact of TSV Induced Thermo-Mechanical Stress on Semiconductor Device Performance

Stress Analysis and Layout Optimization of Nano-TSV in an Advanced Packaging

The fatigue failure analysis of 3D SiP with Through Silicon Via

Power Integrity Modeling, Measurement and Analysis of Seven-Chip Stack for TSV-based 3D IC Integration

Different designs of TSVs for 3D IC: Signal integrity analysis with cascaded scattering matrix

Structural integrity optimization of 3D TSV package by analyzing crack behavior at TSV and BEOL

Image Processing-Based Method of Evaluation of Stress from Grain Structures of Through Silicon Via (TSV)

Interfacial Stress in Through Silicon Vias

3D Modeling and Finite-Element Full-Wave Simulation of TSV for Stack Up SIP Integration Applications

Reliable Design of Electroplated Copper Through Silicon Vias