3D Tcad Modeling for Stress Management in Through Silicon Via (tsv) Stacks

Xiaopeng Xu,Aditya Karmarkar
DOI: https://doi.org/10.1063/1.3615695
2011-01-01
AIP Conference Proceedings
Abstract:Thermo-mechanical stresses are introduced in three dimensional integration structures employing TSVs during fabrication process. Stress analysis is required in order to manage the stress related performance and reliability issues in 3D TSV stacks. The TSV parasitic parameters need to be examined at the same time for system design optimization. In this paper, TCAD methodologies for process simulation, stress and parasitic modeling are demonstrated. The mechanical stress impact on the device performance and structural reliability for various materials and geometries is examined. The TSV parasitic parameters and their effects on performance are also analyzed. The correlation between these parameters is determined to achieve the design trade-offs necessary for optimal 3D integration.
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