Optical Emission Spectroscopy Diagnostic and Thermodynamic Analysis of Thermal Plasma Enhanced Nanocrystalline Silicon CVD Process

Tengfei Cao,Haibao Zhang,Binhang Yan,Wei Lu,Yi Cheng

DOI: https://doi.org/10.1039/c4ra01306a

IF: 4.036

2014-01-01

RSC Advances

Abstract:Optical emission spectroscopy and thermal equilibrium analysis were implemented to study the plasma enhanced chemical vapor deposition of nanocrystalline silicon.

What problem does this paper attempt to address?

Advances in Thermal Plasma Temperature Diagnostic Methods

Xiao-hang TAO,Bao-gen SU,Zhi-guo ZHANG,Guang-dong WEN,Qi-long REN

DOI: https://doi.org/10.3969/j.issn.1003-9015.2017.05.001

2017-01-01

Abstract:Real-time diagnosis of thermal plasma temperature is a very challenging and comprehensive technology, which can provide valuable reference in understanding chemical reaction processes of thermal plasma and verifying simulation results. In this paper, we reviewed contact and non-contact types of temperature diagnostic methods for thermal plasma. Working principle, application range and development direction of each diagnosis method are summarized with emphasis on optic emission spectroscopy in the thermal plasma temperature diagnosis. Real-time online analysis of thermal plasma is considered to be the main direction of future development.
Preparation and Photoluminescence of Nanocrystalline Si-Rich Silicon Oxide Films by Pecvd

Guohua Shi,Gang Xu,Gaorong Han

DOI: https://doi.org/10.1016/j.matlet.2006.04.080

IF: 3

2007-01-01

Materials Letters

Abstract:Nanocrystalline Si-rich silicon oxide films were deposited using plasma enhanced chemical vapor deposition technique with the mixture of silane (SiH4), nitrous oxide (N2O) and hydrogen (H-2) as gas source on quartz glass substrate at the substrate temperature of 300 degrees C. The effect of the ratio N2O/SiH4 on the oxidation, microstructures and photoluminescence (PL) of the as-deposited Si-rich silicon oxide films was investigated with FTIR, XRD and HRTEM. The results reveal that with the increasing ratio of N2O/SiH4, more amounts of oxygen are incorporated in the as-deposited films and more nanosized silicon particles are embedded in the films, forming nanocrystalline Si-rich silicon oxide films. The quantum confinement effect or the cooperation of quantum confinement and luminescence center results in the nanocrystalline Si-rich silicon oxide films of higher PL intensity. (c) 2006 Elsevier B.V. All rights reserved.
High Rate Deposition Of Nanocrystalline Silicon By Thermal Plasma Enhanced Cvd

Tengfei Cao,Haibao Zhang,Binhang Yan,Yi Cheng

DOI: https://doi.org/10.1039/c3ra43481h

IF: 4.036

2013-01-01

RSC Advances

Abstract:Hydrogenated nanocrystalline silicon (nc-Si:H) is a promising alternative for crystalline silicon (c-Si) in the photovoltaic industry. We proposed an atmospheric pressure thermal plasma enhanced CVD (APTPECVD) process for high rate deposition of nc-Si: H on silicon and glass substrates using SiCl4 as the deposition precursor. The deposition rate under typical operating conditions could reach 9.78 nm s(-1), and the deposited nc-Si: H film thickness could reach 17.6 mu m. The grain diameter and crystalline fraction of the deposition product were characterized using SEM, TEM, Raman spectroscopy and XRD. The photoluminescence performance at room temperature was discovered.
Silicon-Oxygen Nanocrystalline Composite Films(nc-SiOx:H)Directly Deposited by Plasma Enhanced Chemical Vapor Deposition

史国华,韩高荣,杜丕一,赵高凌,沈鸽,张溪文

DOI: https://doi.org/10.3969/j.issn.1672-7126.2004.06.008

2004-01-01

Abstract:For the first time, silicon-oxygen nanocrystalline composite films (nc-SiOx:H) were directly deposited by plasma enhanced chemical vapor deposition (PE-CVD) with SiH4, N2O and H2 as the gaseous sources. The microstructures and stoichiometry of the films were studied with Fourier transform infrared spectroscopy (FTIR), X-ray diffraction (XRD), and high resolution electron microscopy (HRTEM). Photoluminescence (PL) was clearly observed at a center about 530 nm (2.34 eV) in the as-deposited films. The results show that nano-scale silicon particles are embedded in the SiOx matrix. We suggest that enhancement of PL with the increase of oxygen originate from oxygen induced defect structures at the interfaces.
Spectroscopic Characterization of Plasmas Generated by ECR Microwave Discharge of N2 Gas and Pulsed Laser Ablation of a B4C Target

Hui Feng,Jian Sun,Dayu Ding,Ning Xu,Zhifeng Ying,Jiada Wu

DOI: https://doi.org/10.1002/ppap.201100115

IF: 3.877

2011-01-01

Plasma Processes and Polymers

Abstract:The plasmas generated by co-action of electron cyclotron resonance (ECR) microwave discharge of N2 gas and pulsed laser ablation (PLA) of a B4C target were spectroscopically characterized using time- and space-resolved optical emission spectroscopy (OES). The plasmas exhibit rapid variations in time and space and the optical emissions of the plasmas show unique characteristics in comparison with the plasmas generated solely by ECR discharge or PLA. At the early stages of the expansion of the PLA boron/carbon plasma in the ECR nitrogen plasma, the plasma emission is dominated by emission lines from atomic and ionic boron and carbon which decrease rapidly during the expansion of the PLA plasma, and then evolves to be dominant in emission bands from nitrogen molecules and nitrogen molecular ions. The emission bands of the C2 Swan system and the CN violet system were also distinguished. The processes including gas-phase reactions occurring in the plasmas were discussed based on the characteristics of the plasma emissions.
Air-stable full-visible-spectrum emission from silicon nanocrystals synthesized by an all-gas-phase plasma approach.

X D Pi,R W Liptak,J Deneen Nowak,N P Wells,C B Carter,S A Campbell,U Kortshagen

DOI: https://doi.org/10.1088/0957-4484/19/24/245603

IF: 3.5

2008-01-01

Nanotechnology

Abstract:A novel dual-plasma system has been developed to combine the synthesis of silicon nanocrystals ( Si-NCs), the etching to controllably tailor the Si-NC size, and the surface functionalization of Si-NCs into one simple all-gas-phase process. Si-NCs are synthesized in SiH4-based plasma; they then travel through CF4-based plasma, where Si-NCs are etched and passivated by C and F. The resulting Si-NCs exhibit air-stable emission across the full visible spectrum. Structural and optical characterization indicates that the emission in the red-to-green range is based on the recombination of quantum-confined excitons in Si-NCs, while the blue emission originates from defect states. The quantum yields of stabilized photoluminescence from Si-NCs range from 16% at the red end to 1% at the blue end.
DEPOSITION OF HYDROGENATED NANOCRYSTALLINE SILICON CARBIDE BY ECR-CVD

Rusli,MB Yu,SF Yoon,SJ Xu,K Chew,J Ahn,Q Zhang

DOI: https://doi.org/10.1142/s0217979202010828

2002-01-01

Abstract:In this work we report on the deposition of hydrogenated nanocrystalline silicon carbide (nc-SiC:H) films using an electron cyclotron resonance chemical vapor deposition (ECR-CVD) system with silane (SiH4) and methane (CH4) as source gases. It was found that the conditions of strong hydrogen dilution and high microwave power are necessary for the fabrication of nanocrystalline SiC grains, which are found to be embedded in an amorphous matrix. The films have been studied using high resolution transmission electron microscopy, infrared absorption, Raman scattering and x-ray photoelectron spectroscopy. All the results have confirmed the prescence of SiC nanocrystallites. Very strong photoluminescence (PL) could be observed from these films at room temperature, with a peak energy of 2.64 eV. This energy, being higher than the optical bandgap of 3C-SiC, can be possibly due to quantum size effect in these crystals, which are embedded in an amorphous matrix of larger bandgap. Time-resolved PL at the peak emission energy exhibits a bi-exponential decay process with lifetimes that are in the order of picoseconds and nanoseconds, which are at least 2 orders of magnitude faster than that of bound excition transitions in bulk 3C-SiC at low temperature. The strong light emission and short PL lifetimes observed strongly suggest that the radiative recombination is a result of direct optical transitions in the SiC nanocrystallites. It was found that upon ultraviolet irradiation using an Ar + laser (351 nm), the PL intensity of the films was enhanced. After 20 minutes of irradiation, the PL intensity increased by about three times. This result suggests that the UV light may lead to modification of nonradiative recombination centers in the films.
THE OES IN DEPOSITING MICROCRYSTALLINE SILICON MATERIAL BY RF-PECVD

Feng Zhu,Ying Zhao,Changchun Wei,Jian Sun,Yan Wang,Hong Song,Xinhua Geng

DOI: https://doi.org/10.3321/j.issn:0254-0096.2005.05.005

2005-01-01

Abstract:The microcrystalline silicon thin film materials were deposited by RF-PECVD technology at high plasma power and low substrate temperature. Measuring the optical emission spectroscopy (OES) could analyze the resultants in plasma. From OES' analysis, the effect of resultants in plasma on growth of microcrystalline silicon was known. The intensity of SiH*, H β*, H α* and H 2* in plasma increase slowly with silane concentration increasing, whereas the ration of H α*/SiH* monotonously is decreased H a* increases quickly, SiH*, H β* and H 2* being saturation, and H α*/SiH* monotonously increases with plasma power increasing. The brightness of plasma mainly depended on the intensity of SiH*, H β* and H 2* in plasma.
Effect of N_2O Plasma Treatment on Luminescence of Silicon-rich Silicon Nitride Films

Deren Yang

2009-01-01

Abstract:Silicon-rich silicon nitride(SRSN) films were deposited on p-type silicon substrates using a conventional PECVD system.After deposition,SRSN films were treated by N_2O plasma in the PECVD system.And MIS structure devices were fabricated using ITO as anode and a 300nm Al film as cathode.It was found that the N_2O plasma treatment enhanced the electroluminescence of the SRSN MIS devices.However,the enhanced EL would be decreased by high-temperature annealing.The enhanced EL was attributed to the decreasing of Si dangling bonds by re-bonding with N atoms introduced by N_2O plasma treatment.And after high-temperature annealing,the breaking of Si-N bonding resulted in the decreasing of EL of the SRSN MIS devices.
Cathodoluminescence investigation of silicon nanowires fabricated by thermal evaporation of SiO

G. Jia,T. Arguirov,M. Kittler,Z. Su,D. Yang,J. Sha

DOI: https://doi.org/10.1134/S1063782607040057

IF: 0.66

2007-01-01

Semiconductors

Abstract:Silicon nanowire samples fabricated by thermal evaporation of SiO powder were investigated by Cathodoluminescence. Three main bands were found at low temperatures, namely, peak 1 at about 620–650 nm (2.0–1.91 eV), peak 2 at 920 nm (1.35 eV), and peak 3 at 1280 nm (0.97 eV). An additional broad band (peak 4 ) in the infrared region with its maximum at ∼1570 nm (0.79 eV) appears at room temperature. The origins of the emission bands are discussed.
Field Emission Properties of Nanocrystalline and Amorphous Silicon Carbon Nitride Prepared from Microwave Plasma Chemical Vapor Deposition

WJ Cheng,JC Jiang,Y Zhang,DZ Shen,HS Zhu

DOI: https://doi.org/10.4028/www.scientific.net/msf.480-481.65

2005-01-01

Materials Science Forum

Abstract:Silicon carbon nitride (SiCN) films have been deposited on silicon wafers by microwave plasma chemical vapor deposition (MPCVD). Gas mixture of H2, CH4, N2, and SiH4 was used as precursors, in which the flow rate of N2 was changed. X-ray photoelectron spectroscopy (XPS) and micro-Raman spectroscopy were employed to characterize the composition and bonding structures, while field-emission scanning electron microscopy were used to investigate the microstructure of the films. With increasing the flow rate of N2 from 50 sccm to 300 sccm, the SiCN films changed from amorphous to nanocrystalline. Characteristic current-voltage measurements indicate a low turn-on field of 10.8 V/µm. Field emission current density of 4.5 mA/cm2 has been observed at 20 V/µm.
Influence of annealing on microstructures and photoluminescence of nano-composite silicon film

Ying Xiao,Yong Liü,Gaorong Han

2004-01-01

Abstract:A specially designed chemical vapor deposition (CVD) system with SiH4 as the source gas was lab built to grow nano-composition silicon films on glass substrate. The microstructures and photoluminescence of these films were systematically studied by micro-Raman spectroscopy, photoluminescence (PL) and transmission electron microscopy (TEM). The results showed that as the deposition temperature increased the PL intensity of original samples decreased. When the annealing temperature was below 600°C, it could not strongly affect the crystallization. If the anneal temperature increased or the anneal time prolonged, the PL intensity could be enhanced. And a kind of single-crystal Si-Ox was found in most of the annealed samples. By comparable investigation, two luminescence mechanisms could explain the different PL intensity of origin and annealed samples.
Coherent X-ray Spectroscopy Elucidates Nanoscale Dynamics of Plasma-Enhanced Thin-Film Growth

Peco Myint,Jeffrey M. Woodward,Chenyu Wang,Xiaozhi Zhang,Lutz Wiegart,Andrei Fluerasu,Randall L. Headrick,Charles R. Eddy,Karl F. Ludwig

DOI: https://doi.org/10.1021/acsnano.3c07619

IF: 17.1

2024-01-10

ACS Nano

Abstract:Sophisticated thin film growth techniques increasingly rely on the addition of a plasma component to open or widen a processing window, particularly at low temperatures. Taking advantage of continued increases in accelerator-based X-ray source brilliance, this real-time study uses X-ray Photon Correlation Spectroscopy (XPCS) to elucidate the nanoscale surface dynamics during Plasma-Enhanced Atomic Layer Deposition (PE-ALD) of an epitaxial indium nitride film. Ultrathin films are synthesized from...

materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology
Glow discharge-optical emission spectroscopy for in situ analysis of surfaces in plasmas

Priyanka Arora,Junghyun Cho,Rafael Cervantes,Vincent M. Donnelly

DOI: https://doi.org/10.1116/6.0000373

2020-12-01

Abstract:In situ, real-time characterization of surfaces exposed to plasmas is of great interest. Common chemical analysis methods such as x-ray photoelectron spectroscopy, Auger electron spectroscopy, and secondary ion mass spectroscopy cannot be used. Here, we discuss the use of glow discharge-optical emission spectroscopy for this purpose. A small coupon piece (aluminum coated with yttria in this study) was mounted on an rf-biased electrode and inserted into an opening in the reactor wall. Silicon or SiO2 substrates on a separately rf-biased electrode were etched in an inductively coupled plasma (ICP) of Cl2/Ar/O2 or C4F8/O2, respectively. Pulsed bias was applied to sputter the surface of the coupon piece in the wall at the edge of the ICP, either after etching in an Ar ICP or during etching in the Cl2/Ar/O2 ICP. Optical emission from the region above the coupon surface was collected and spectrally resolved. The difference in intensity between the coupon bias on and off conditions was used to determine what species were present on the surface. A quantification method for converting emission intensities into atomic composition depth profiles is presented.

physics, applied,materials science, coatings & films
Revealing thermal ablation mechanisms of C/SiC with in situ optical observation and numerical simulation

Yunlong Tang,Mengkun Yue,Jinsong Zhang,Yan Li,Xufei Fang,Xue Feng

DOI: https://doi.org/10.1016/j.jeurceramsoc.2020.04.010

IF: 5.7

2020-01-01

Journal of the European Ceramic Society

Abstract:Structural ceramics such as C/SiC (carbon fiber reinforced silicon carbide) are of great importance for high temperature applications, where thermal ablation could occur and impair the structural integrity. Here we adopt in situ and real time optical visualization technique and numerical simulation to study the thermal ablation mechanisms of C/SiC subjected to oxyacetylene flame. The in situ optical setup captures the real time surface evolution at temperatures up to 1800 degrees C, demonstrating clearly the formation of surface gas bubble, the flowing and merging process of liquid SiO2, which are later well reproduced and explained by the numerical simulation. Four different surface ablation regions on the sample subjected to thermal ablation have been identified by the captured images and flow field streamlines, which reveal the distribution and flow mechanism of SiO2 droplets on the C/SiC surface.
Gas-surface interactions in a large-scale inductively coupled wind tunnel investigated by emission/absorption spectroscopy

Sihan Fang,Xin Lin,Xingying Zhu,Fa Zhou,Junna Yang,Fei Li,Dongbin Ou,hui zeng,xilong Yu

DOI: https://doi.org/10.1063/5.0102274

IF: 3.5

2022-07-23

Physics Today

Abstract:Precise prediction of aerothermal loads is significantly limited by the unclear interactions between the thermal protection system surface and the surrounding high-enthalpy gas. To address this, we propose an optical diagnostic method based on optical emission spectroscopy and laser absorption spectroscopy to investigate the gas-surface interactions within the boundary layer. Experiments are conducted in an air plasma flow produced by the 1.2 MW inductively coupled plasma wind tunnel at the China Academy of Aerospace Aerodynamics with enthalpy of 20 MJ/kg and heating time of 100 s. The cylindrical samples made of pure silicon carbide are tested, and quartz samples with the same exposed geometry are tested in parallel as a reference material. The optical emission spectroscopy system has four spectrometers to cover the wide wavelength range 200-1100nm, providing qualitative, spatially-, and spectrally- resolved measurements of the multi-species radiative emission adjacent to the sample surface. Laser absorption spectroscopy is deployed at different axial locations to quantify the number density and translational temperature of OI (3s5S) with a 500 Hz scanning rate and 200 kHz acquisition rate. Additionally, the surface temperature of each sample is detected by an infrared pyrometer. Scanning electron microscopy and energy dispersive spectrometry are performed before and after the plasma heating. Our measurement results provide valuable information on surface reaction pathways and catalytic recombination effects on atomic oxygen number density distributions. Finally, these self-consistent results show that the proposed method is reliable to deeply investigate gas-surface interactions within boundary layer in harsh aerothermal environment.

physics, multidisciplinary
Plasma emission spectroscopy and optical properties of reactive-sputtered silicon oxynitride films

Ramon Rodriguez Lopez,N. Abundiz-Cisneros,Roberto Sangines,J. Aguila-Muñoz,Roberto Machorro Mejía

DOI: https://doi.org/10.1088/1361-6463/ad3d6a

2024-04-12

Journal of Physics D Applied Physics

Abstract:Silicon oxynitride thin films were synthesized via reactive direct current magnetron sputtering under different reactive gas mass flow ratios (O2:N2) and discharge powers. The process was monitored using optical emission spectroscopy, while spectroscopic ellipsometry was used to characterize the thin film optical properties and deposition rates. A correlation between plasma emission lines, thin film optical properties and deposition parameters was observed. The study demonstrates the use of emission lines to monitor and differentiate the deposition process. Consistent silicon oxynitride optical properties are obtained when similar plasma conditions are granted.

physics, applied
Revealing thermal ablation mechanisms of C/SiC with in situ optical observation and numerical simulation

Yunlong Tang,Mengkun Yue,Jinsong Zhang,Yan Li,Xufei Fang,Xue Feng

DOI: https://doi.org/10.1016/j.jeurceramsoc.2020.04.010

IF: 5.7

2020-09-01

Journal of the European Ceramic Society

Abstract:Structural ceramics such as C/SiC (carbon fiber reinforced silicon carbide) are of great importance for high temperature applications, where thermal ablation could occur and impair the structural integrity. Here we adopt in situ and real time optical visualization technique and numerical simulation to study the thermal ablation mechanisms on C/SiC subjected to oxyacetylene flame. The in situ optical setup captures the real time surface evolution at temperatures up to 1800℃, demonstrating clearly the formation of surface gas bubble, the flowing and merging process of liquid SiO2, which are later well reproduced and explained by the numerical simulation. Four different surface ablation regions on the sample subjected to thermal ablation have been identified by the captured images and flow field streamlines, which reveal the distribution and flow mechanism of SiO2 droplets on the C/SiC surface.

materials science, ceramics
Thermal CVD synthesis and characterization of silicon nanopowders

YANG Hong,JIN Da-lai,MA Zhao-jun,WANG Yong,WANG Xin-yan,YAO Kui-hong

DOI: https://doi.org/10.3785/j.issn.1008-9497.2008.03.010

2008-01-01

Abstract:Silicon nanopowders were successfully prepared by the thermal-CVD method.X-ray diffraction(XRD) and transmission electron microscopy(TEM) revealed that the products were amorphous sphere-like nanopowder with particle size about 20~100 nm.The particle size was sensitive to the decomposition temperature.The average diameters of the products decreased as the decomposition temperature increased.When the temperature reached 700 ℃,the diameters of the products grew rapidly.The Flourier-Infrared Spectra(FT-IR) displayed that the products containe Si—H bonds and the content of H atom decreases with increasing decompositioo temperature increased.The crystal silicon can be obtained after annealing at 700 ℃.
A Fast Method to Diagnose Phase Transition from Amorphous to Microcrystalline Silicon

Hou GuoFu,Xue JunMing,Yuan YuJie,Sun Jian,Zhao Ying,Geng XinHua

DOI: https://doi.org/10.1007/s11433-007-0074-2

2007-01-01

Abstract:A series of hydrogenated silicon thin films were prepared by the radio frequency plasma enhanced chemical vapor deposition method (RF-PECVD) with various silane concentrations. The influence of silane concentration on structural and electrical characteristics of these films was investigated to study the phase transition region from amorphous to microcrystalline phase. At the same time, optical emission spectra (OES) from the plasma during the deposition process were monitored to get information about the plasma properties, Raman spectra were measured to study the structural characteristics of the deposited films. The combinatorial analysis of OES and Raman spectra results demonstrated that the OES can be used as a fast method to diagnose phase transition from amorphous to microcrystalline silicon. At last the physical mechanism, why both OES and Raman can be used to diagnose the phase transition, was analyzed theoretically.

Optical Emission Spectroscopy Diagnostic and Thermodynamic Analysis of Thermal Plasma Enhanced Nanocrystalline Silicon CVD Process

Advances in Thermal Plasma Temperature Diagnostic Methods

Preparation and Photoluminescence of Nanocrystalline Si-Rich Silicon Oxide Films by Pecvd

High Rate Deposition Of Nanocrystalline Silicon By Thermal Plasma Enhanced Cvd

Silicon-Oxygen Nanocrystalline Composite Films(nc-SiOx:H)Directly Deposited by Plasma Enhanced Chemical Vapor Deposition

Spectroscopic Characterization of Plasmas Generated by ECR Microwave Discharge of N2 Gas and Pulsed Laser Ablation of a B4C Target

Air-stable full-visible-spectrum emission from silicon nanocrystals synthesized by an all-gas-phase plasma approach.

DEPOSITION OF HYDROGENATED NANOCRYSTALLINE SILICON CARBIDE BY ECR-CVD

THE OES IN DEPOSITING MICROCRYSTALLINE SILICON MATERIAL BY RF-PECVD

Effect of N_2O Plasma Treatment on Luminescence of Silicon-rich Silicon Nitride Films

Cathodoluminescence investigation of silicon nanowires fabricated by thermal evaporation of SiO

Field Emission Properties of Nanocrystalline and Amorphous Silicon Carbon Nitride Prepared from Microwave Plasma Chemical Vapor Deposition

Influence of annealing on microstructures and photoluminescence of nano-composite silicon film

Coherent X-ray Spectroscopy Elucidates Nanoscale Dynamics of Plasma-Enhanced Thin-Film Growth

Glow discharge-optical emission spectroscopy for in situ analysis of surfaces in plasmas

Revealing thermal ablation mechanisms of C/SiC with <i>in situ</i> optical observation and numerical simulation

Gas-surface interactions in a large-scale inductively coupled wind tunnel investigated by emission/absorption spectroscopy

Plasma emission spectroscopy and optical properties of reactive-sputtered silicon oxynitride films

Revealing thermal ablation mechanisms of C/SiC with in situ optical observation and numerical simulation

Thermal CVD synthesis and characterization of silicon nanopowders

A Fast Method to Diagnose Phase Transition from Amorphous to Microcrystalline Silicon