Abstract:We investigated the growth mechanism of SiO x N y films deposited via plasma-enhanced atomic layer deposition at low temperatures (100–300 °C) using a tetraisocyanate silane (Si(NCO) 4 ) precursor and N 2 plasma. By using tetraisocyanate silane, which does not contain hydrogen, we were able to deposit SiO x N y with notably less hydrogen, around 3–5%, compared to using silicon precursors that contain hydrogen. Additionally, the precursor ligands, including oxygen, react with surface amine groups (-NH 2 ) to form Si – N –O bonds. Therefore, by understanding the adsorption mechanism of the precursor and controlling the temperature that can affect the bond formation, we can successfully produce SiO x N y films without any oxidizing source. We utilized density functional theory to explore the adsorption mechanism during the deposition of SiO x N y films and proposed a possible adsorption pathway of the precursors and by-products on the surface. We also employed various characterization techniques, such as spectroscopic ellipsometry, X-ray photoelectron spectroscopy, X-ray reflectometry, secondary ion mass spectroscopy, and current-electric field and capacitance-voltage analyses to establish correlations between the composition and dielectric properties of the thin films. Increasing the deposition temperature results in an increased presence of stronger and more stable Si –N bonds compared to Si –O and O –N bonds. As a result, the dielectric constant of the SiO x N y film increased from 5.8 to 7.4, while the leakage current density decreased from 1.52 × 10 −8 A/cm 2 to 8.56 × 10 −10 A/cm 2 . Additionally, the counterclockwise hysteresis decreased from 0.16 V to 0.07 V as the amount of hydrogen in the SiO x N y film decreased. This can be interpreted as a reduction in hydrogen impurities, which act as charge trapping sites within the film, leading to a decrease in hysteresis with increasing temperature.

Plasma emission spectroscopy and optical properties of reactive-sputtered silicon oxynitride films

Optical Properties Study of Silicon Oxynitride Films Deposited by RF Magnetron Sputtering

Deposition of Dense SiO2 Thin Films for Electrical Insulation Applications by Microwave ECR Plasma Source Enhanced RF Reactive Magnetron Sputtering

The Variation of Physical Properties of Plasma‐Deposited Silicon Nitride and Oxynitride with Their Compositions

Investigation of optical properties of silicon oxynitride films deposited by RF PECVD method

Preparation and Photoluminescence of Nanocrystalline Si-Rich Silicon Oxide Films by Pecvd

Non-equilibrium,Atmospheric-pressure Plasma Jet for Depositing Silicon Oxide Films

Effect of N_2O Plasma Treatment on Luminescence of Silicon-rich Silicon Nitride Films

Deposition of SiOxNy films as gate insulator via r.f. reactive sputtering

Nanostructure and Optical Properties of Sio2 Films Prepared by Reactive Midfrenquency Magnetron Sputtering

Measurements Of Microstructural, Chemical, Optical, And Electrical Properties Of Silicon-Oxygen-Nitrogen Films Prepared By Plasma-Enhanced Atomic Layer Deposition

Silicon-Oxygen Nanocrystalline Composite Films(nc-SiOx:H)Directly Deposited by Plasma Enhanced Chemical Vapor Deposition

Thin films of silicon nitride deposited at room temperature by non-reactive magnetron sputtering: radiofrequency power and deposition time influence on the formation of α-Si3N4 and its optical properties

Silicon nitride films synthesized by reactive pulsed laser deposition in an electron cyclotron resonance nitrogen plasma

Optimization of LPCVD Deposition Conditions of Silicon-Rich Silicon Nitride to Obtain Suitable Optical Properties for Photoluminescent Coating

Electron Emission Properties of Silicon-Rich Silicon Oxide Film Prepared by Reactive Magnetron Sputtering Deposition and Rapid Thermal Annealing

Optical emission spectroscopy study on deposition process of microcrystalline silicon

Optical Properties in Mid-Infrared Range of Silicon Oxide Thin Films with Different Stoichiometries

One-Step Synthesis of Silicon Oxynitride Films Using a Steady-State and High-Flux Helicon-Wave Excited Nitrogen Plasma

Silicon oxynitride thin films by plasma-enhanced atomic layer deposition using a hydrogen-free metal-organic silicon precursor and N 2 plasma

Electroluminescence of As-Sputtered Silicon-Rich SiOx Films