Abstract:To research the stability of Mg-based multilayers,two groups of multilayers,20 and [Mg/SiC]20 were coated on a Si(100) substrate by magnetron sputtering method.The two samples were tested by a microscopy,a surface roughness experiment and an X-ray grazing incidence reflectivity test at room temperature and a relative humidity of 80%.The contract experiments on multilayer damage for Mg/Co和Mg/SiC were performed in the same condition.The results show that after being exposed in the atmospheric environment for 4 days,the damaged area and surface roughness of the Mg/SiC multilayer sample are up to 26.34% and 10 nm,respectively,while those of the Mg/Co multilayer sample are 2.78% and 5 nm,respectively.After 6 days,the 1st reflection peak of Mg/SiC sample is completely disappeared,and Mg/Co sample still has a peak of 47.63% reflectivity.The experimental results show that the Mg/Co multilayer sample has a better environmental stability as compared with the Mg/SiC multilayer.The X Photoelectron Spectroscopy(XPS) shows that the productions of the damaged Mg-based multilayers are mainly MgCO3,Mg(OH)2 and modest MgO.Moreover,the content ratio of Mg(OH)2 and MgCO3 in the inner layer is significantly higher than that in the surface layer.Experimental results suggest that the reason for Mg-based multilayer damage is the erosion of H2O(g),so the capping layer of Mg-based multilayer should prevent the H2O(g) penetrating into the mulilayer.

Analysis of Multilayer Film Using RBS/Channeling, Sputtering/RBS and SIMS

Study of Si and Ge growth on Si(100) surface

Structural characterization of Mo/Si multilayer by grazing incidence X-ray diffraction

Analysis of periodic Mo/Si multilayers: influence of the Mo thickness

Ge-Dot/Si Multilayered Structures Through Ni-Induced Lateral Crystallization

Microstructures of Ge-dots/Si Multilayered Structures Fabricated by Ni-induced Lateral Crystallization

Characterization of ultra smooth interfaces in Mo/Si-multilayers

Study on silicon molecular beam epitaxial layer morphology by scanning tunneling microscopy

Growth of Ge-Si strained layers and DC XRD study on epitaxial films

Epitaxy of SiGe Layers by Ultrahigh Vacuum Chemical Vapor Deposition

Epitaxial growth of high-quality Ge layers on Si with Ge2H6 under UHV-CVD conditions

Interlayer Microstructure of Sputtered Mo/Si Multilayers

Stability of Mg/SiC, Mg/Co EUV multilayers

The growth and quality evaluation of strained Si material with multilayer structure

AFM and TEM study of hydrogenated sputtered Si/Ge multilayers

Interface Investigation on SiGe/Si Multilayer Structures: Influence of Different Epitaxial Process Conditions

Comparative Study on Microstructure of Mo/Si Multilayers Deposited on Large Curved Mirror with and without the Shadow Mask

Asymmetric Interface and Growth Mechanism in Sputtered W/Si and WSi2/Si Multilayers

Simulation on Ion Implantation into SiGe Substrate

Investigation of Strain-Relaxed SiGe Thin Film Grown on Ion-Implanted Si Compliant Substrate

Investigation of the amorphous-to-crystalline transition in Mo/Si multilayers