Abstract:In recent years, GaSb-on-Si direct heteroepitaxy has been highly desirable to extend the operating wavelength range into mid-infrared and high-mobility applications, such as free-space communications, gas sensing, and hyperspectral imaging. High-quality GaSb films on Si remain challenging due to the high density of defects generated during the growth. For this purpose, epitaxial GaSb films were grown by molecular beam epitaxy on on-axis Si(001). Due to the large lattice mismatch (12.2%) between GaSb and Si, here, we proposed a radical design and growth strategy with the primary objective of achieving the annihilation of antiphase boundaries (APBs) and the reduction of threading dislocation density (TDD). Benefitting from a V-grooved Si hollow structure, we demonstrated the growth of emerging-APB-free GaSb film on Si(001) with low mosaicity. Moreover, by introducing InGaSb/GaSb dislocation filtering layers, the atomically flat surface root mean square roughness is improved to 0.34 (on Si) and 0.14 nm (on GaAs/Si). Moreover, the corresponding TDD can be reduced to 3.5 × 10 7 and 2 × 10 7 cm −2 , respectively, one order of magnitude lower than the minimum value found in the literature. These reported results are a powerful lever to improve the overall quality of epitaxial Si-based antimonide, which is of high interest for various devices and critical applications, such as laser diodes, photo-detectors, and solar cells.

High-Quality Ge Films on Si Substrates Using Sb Surfactant-Mediated Graded Sige Buffers

High-quality Ge film grown on Si substrate and its thermodynamic mechanism

Sige Epitaxy with Graded Buffer by Ultrahigh Vacuum Chemical Vapor Deposition

Cvd Growth of Ge Films on Graded Si1-Xgex: C Buffers

HV/CVD Grown Relaxed SiGe Buffer Layers for SiGe HMOSFETs

High-quality germanium growth on (111)-faceted V-groove silicon by molecular beam epitaxy

Growth of Ge Layer on Relaxed Ge-Rich SiGe by Ultrahigh Vacuum Chemical Vapor Deposition

Epitaxial growth of low dislocation Ge thin films on Si (001) substrates using a Si-Ge intermediate layer

Ge/Si superlatices grown on thin relaxed GeSi alloy buffer with Ge islanding buried layer

Epitaxial Growth of Fully Relaxed Si0.75Ge0.25 on SOI Substrate

Optimization of Hetero-Epitaxial Growth for the Threading Dislocation Density Reduction of Germanium Epilayers

Epitaxial growth of high-quality Ge layers on Si with Ge2H6 under UHV-CVD conditions

High-density Ge Dots Grown on Si Substrate by Modified S-K Method

Chemical vapor deposition of Ge films on Si1-xGex:C buffers

Epitaxial GaSb films directly grown on on-axis Si(001) with low defect density by MBE

Growth of Graded SiGe Films by Novel UHV/CVD System

The growth and investigation of SiGe films on buried Ge islands

High quality partially relaxed SiGe film grown on silicon-on-insulator substrate by ultra-high vacuum chemical vapor deposition

Effects of phosphorous and antimony doping on thin Ge layers grown on Si

Heteroepitaxial Growth of Ge Films on Si Substrates by Molecular-Beam Epitaxy

Strain Relaxation in Graded SiGe Grown by Ultra-High Vacuum Chemical Vapor Deposition (UHVCVD)