Abstract:With the development of new designs and materials for nano-scale transistors, vertical Gate-All-Around Field Effect Transistors (vGAAFETs) with germanium as channel materials have emerged as excellent choices. The driving forces for this choice are the full control of the short channel effect and the high carrier mobility in the channel region. In this work, a novel process to form the structure for a VGAA transistor with a Ge channel is presented. The structure consists of multilayers of Si0.2Ge0.8/Ge grown on a Ge buffer layer grown by the reduced pressure chemical vapor deposition technique. The Ge buffer layer growth consists of low-temperature growth at 400 °C and high-temperature growth at 650 °C. The impact of the epitaxial quality of the Ge buffer on the defect density in the Si0.2Ge0.8/Ge stack has been studied. In this part, different thicknesses (0.6, 1.2 and 2.0 μm) of the Ge buffer on the quality of the Si0.2Ge0.8/Ge stack structure have been investigated. The thicker Ge buffer layer can improve surface roughness. A high-quality and atomically smooth surface with RMS 0.73 nm of the Si0.2Ge0.8/Ge stack structure can be successfully realized on the 1.2 μm Ge buffer layer. After the epitaxy step, the multilayer is vertically dry-etched to form a fin where the Ge channel is selectively released to SiGe by using wet-etching in HNO3 and H2O2 solution at room temperature. It has been found that the solution concentration has a great effect on the etch rate. The relative etching depth of Ge is linearly dependent on the etching time in H2O2 solution. The results of this study emphasize the selective etching of germanium and provide the experimental basis for the release of germanium channels in the future.

Ultrathin Low Temperature Sige Buffer For The Growth Of High Quality Ge Epilayer On Si(100) By Ultrahigh Vacuum Chemical Vapor Deposition

Growth and Microstructures of High Density Ge Quantum Dots on SiO_2 Layers

Growth of Ge Layer on Relaxed Ge-Rich SiGe by Ultrahigh Vacuum Chemical Vapor Deposition

Sige Epitaxy with Graded Buffer by Ultrahigh Vacuum Chemical Vapor Deposition

Epitaxial growth of high-quality Ge layers on Si with Ge2H6 under UHV-CVD conditions

Fabrication of Strained Ge Film Using a Thin SiGe Virtual Substrate

Ge epitaxy at ultra-low growth temperatures enabled by a pristine growth environment

Epitaxial growth of low dislocation Ge thin films on Si (001) substrates using a Si-Ge intermediate layer

Growth of Fully Relaxed Si0. 83Ge0. 17 Layer Free of Dislocations by UHV/CVD System

High-quality germanium growth on (111)-faceted V-groove silicon by molecular beam epitaxy

High-density Ge Dots Grown on Si Substrate by Modified S-K Method

Strain Relaxation in Graded SiGe Grown by Ultra-High Vacuum Chemical Vapor Deposition (UHVCVD)

Doping And Growth Of Thin Si Epilayer And Sige By Uhv/Cvd

Optimization of Hetero-Epitaxial Growth for the Threading Dislocation Density Reduction of Germanium Epilayers

Ge/Si superlatices grown on thin relaxed GeSi alloy buffer with Ge islanding buried layer

Strained Si0.2Ge0.8/Ge multilayer Stacks Epitaxially Grown on a Low-/High-Temperature Ge Buffer Layer and Selective Wet-Etching of Germanium

Epitaxial Ge thin film Growth on Si Using a Cost-Effective Process in Simplified CVD Reactor

High quality partially relaxed SiGe film grown on silicon-on-insulator substrate by ultra-high vacuum chemical vapor deposition

Thin Highly-Relaxed SiGe Induced by Ion Implantion into the Epitaxial Substrates

High-quality Ge film grown on Si substrate and its thermodynamic mechanism

Study of Si and Ge growth on Si(100) surface