Enhancement-Mode <inline-formula> <tex-math notation="LaTeX">$\beta$ </tex-math></inline-formula>-Ga<sub>2</sub>O<sub>3</sub> Metal–Oxide–Semiconductor Field-Effect Solar-Blind Phototransistor With Ultrahigh Detectivity and Photo-to-Dark Current Ratio
Yuan Qin,Hang Dong,Shibing Long,Qiming He,Guangzhong Jian,Ying Zhang,Xuanze Zhou,Yangtong Yu,Xiaohu Hou,Pengju Tan,Zhongfang Zhang,Qi Liu,Hangbing Lv,Ming Liu
DOI: https://doi.org/10.1109/LED.2019.2908948
IF: 4.8157
2019-01-01
IEEE Electron Device Letters
Abstract:An enhancement-mode
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-Ga
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metal–oxide–semiconductor field-effect solar-blind phototransistor on Si-doped homoepitaxial film grown by molecular beam epitaxy is demonstrated in this letter. Gate-recess process was employed to fully deplete the Ga
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channel to achieve positive threshold voltage
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(7 V), which broadens the operating range of the solar-blind phototransistor. The dark current of about 0.7 pA is extremely low. Under 254-nm light illumination of 63
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/cm
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, the change of drain current reaches more than 6 orders of magnitude. Record high detectivity of 1.3
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Jones and photo-to-dark current ratio of
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are obtained, respectively. In addition, the rise and decay time are as short as 100 and 30 ms, respectively. High responsivity of
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A/W and external quantum efficiency of
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% are also achieved with apparent solar-blind photodetection.