Abstract:The growth characteristics of Ta2O5 thin films by atomic layer deposition (ALD) were examined using Ta(NtBu)(NEt2)3 (TBTDET) and Ta(NtBu)(NEt2)2Cp (TBDETCp) as Ta-precursors, where tBu, Et, and Cp represent tert-butyl, ethyl, and cyclopentadienyl groups, respectively, along with water vapor as oxygen source. The grown Ta2O5 films were amorphous with very smooth surface morphology for both the Ta-precursors. The saturated ALD growth rates of Ta2O5 films were 0.77 Å cycle-1 at 250 °C and 0.67 Å cycle-1 at 300 °C using TBTDET and TBDETCp precursors, respectively. The thermal decomposition of the amido ligand (NEt2) limited the ALD process temperature below 275 °C for TBTDET precursor. However, the ALD temperature window could be extended up to 325 °C due to a strong Ta-Cp bond for the TBDETCp precursor. Because of the improved thermal stability of TBDETCp precursor, excellent nonuniformity of ∼2% in 200 mm wafer could be achieved with a step coverage of ∼90% in a deep hole structure (aspect ratio 5:1) which is promising for 3-dimensional architecture to form high density memories. Nonetheless, a rather high concentration (∼7 at. %) of carbon impurities was incorporated into the Ta2O5 film using TBDETCp, which was possibly due to readsorption of dissociated ligands as small organic molecules in the growth of Ta2O5 film by ALD. Despite the presence of high carbon concentration which might be an origin of large leakage current under electric fields, the Ta2O5 film using TBDETCp showed a promising resistive switching performance with an endurance cycle as high as ∼17 500 for resistance switching random access memory application. The optical refractive index of the deposited Ta2O5 films was 2.1-2.2 at 632.8 nm using both the Ta-precursors, and indirect optical band gap was estimated to be ∼4.1 eV for both the cases.

Formation and Electric Property Measurement of Nanosized Patterns of Tantalum Oxide by Current Sensing Atomic Force Microscope

XPS analysis and electrical conduction mechanisms of atomic layer deposition grown Ta2O5 thin films onto p-Si substrates

Quantitative Measurement of Local Conductivity of SnO2 Nanobelt Field Effect Transistor Utilizing Microwave Atomic Force Microscopy

Fabrication of A Nanoelectromechanical Switch Using A Suspended Carbon Nanotube

Tuning of Electrical and Optical Properties of Tantalum Doped TiO2 Flims Prepared by Sol-gel Method

I-V Characteristics of Tantalum Oxide Film and the Effect of Defects on Its Electrical Properties

Formation of a Nanorod-Assembled TiO2 Actinomorphic-Flower-like Microsphere Film via Ta Doping Using a Facile Solution Immersion Method for Humidity Sensing

Local Oxidation of Titanium Thin Films Using an Atomic Force Microscope under Static and Pulsed Voltages

C-V and Dlts Studies of Al/Ta2o5/N-Si Structures with Ta2o5 Thin Films Deposited by Pulsed Laser Deposition

Spectromicroscopy of Tantalum Oxide Memristors

An atomically thin oxide layer on the elemental superconductor Ta(001) surface

Crystal Structure, Stability, and Metal-Insulator-Metal Transitions in Tantalum Oxides: Implication for Memristive Devices

Facile synthesis of nanoscale tantalum powder by electro-deoxidation of Ta2O5

Comparison of the Atomic Layer Deposition of Tantalum Oxide Thin Films Using Ta(NtBu)(NEt2)3, Ta(NtBu)(NEt2)2Cp, and H2O

Self-aligned Patterning of Tantalum Oxide on Cu/SiO2 Through Redox-Coupled Inherently Selective Atomic Layer Deposition.

An Investigation of Oxides of Tantalum Produced by Pulsed Laser Ablation and Continuous Wave Laser Heating

Electrical characterization of Ta2O5 films deposited by laser reactive ablation of metallic Ta

Deposition of Tantalum Oxide Films by Uv Laser Reactive Ablation in O-3 Ambient

Characteristics of Tantalum Oxynitride Films Prepared by Rf Magnetron Sputtering

Low Temperature Organic Thin-Film Transistor Based On Tantalum Pentoxide Prepared By Anodization

Pulsed laser deposition of tantalum oxide thin films