Quantitative Measurement of Local Conductivity of SnO2 Nanobelt Field Effect Transistor Utilizing Microwave Atomic Force Microscopy

Minji Zhao,Yasuhiro Kimura,Yuhki Toku,Yang Ju
DOI: https://doi.org/10.35848/1882-0786/acaaf3
IF: 2.819
2023-01-01
Applied Physics Express
Abstract:A non-contact quantitative method for measuring the electrical conductivity of a SnO2 nanobelt field-effect transistor (FET) with nanometer-scale spatial resolution is reported. The topography and microwave images of the nanobelt FET were measured by microwave atomic force microscopy (M-AFM) under a constant source voltage and different back-gate voltages. The output characteristics of the nanobelt FET were measured using a two-probe measurement method. The local conductivity of the SnO2 nanobelt FET measured by M-AFM concurred with that obtained by the two-probe measurement. Therefore, M-AFM is a promising method for measuring the local conductivity of nanomaterial FETs.
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