Measurement of electrical properties of materials under the oxide layer by microwave-AFM probe

Lan Zhang,Yang Ju,Atsushi Hosoi,Akifumi Fujimoto
DOI: https://doi.org/10.1007/s00542-012-1512-2
2012-01-01
Abstract:The capability of a new AFM-based apparatus named microwave atomic force microscope (M-AFM) which can measure the topography and electrical information of samples simultaneously was investigated. Some special samples with different thicknesses of dielectric film (SiO 2 ) which plays the role of oxide layer creating on the material surface were fabricated. The measurement of electrical properties of materials under the oxide layer by the M-AFM was studied. The results indicate that the M-AFM can lead the microwave signal penetrate the oxide film (SiO 2 ) with a limited thickness of 60 nm and obtain the electrical information of underlying materials.
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