Abstract:The local electrical conductivity of aluminum thin film with dimensions from micron to submicron was quantitatively measured by a four-point atomic force microscope (AFM) technique. The technique is a combination of the principles of four-point probe method and standard AFM. A silicon nitride based AFM probe with a V-shaped two-dimensional sliced structure tip was patterned by using conventional photolithography method. The probe was then etched to four parallel electrodes isolated from each other, for the purpose of performing current input and electrical potential drop measurement. The spacing between electrodes is smaller than 1.0 μm, which facilitates the quantitative electrical conductivity measurement of ultrathin film. The four-point AFM probe technique is capable of measuring surface topography together with local conductivity simultaneously. The technique was applied to a series of 99.999% aluminum thin films with thicknesses from micron to submicron. The repeatable measurements demonstrate the capability of this technique and its possible extension to be used for fast in situ electrical properties characterization of submicron interconnects that widely applied in nanosensors and nanodevices.

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