Abstract:A new atomic force microscope (AFM) probe for local conductivity measurement is presented. This silicon nitride based probe with a V-shaped two-dimensional sliced structure tip is patterned by using conventional photolithography method. The probe is then etched to four parallel electrodes that isolated from each other, for the purpose of performing current input and electrical potential drop measurement. The newly developed four-point AFM probe not only inherits the function of AFM surface topography generating but also has the capability of characterizing the local conductivity simultaneously. The nanoresolution position control mechanism of AFM allows the probe scanning across micrometers sized area and creating high spatial resolution map of the in-plane conductivities. Experiments have shown this four-point AFM probe to be mechanically flexible and robust. The repeatable conductivity measurements on the surface of aluminum and indium tin oxide (ITO) thin films indicate this four-point AFM probe technique has potential applications for characterizing devices and materials in microscale.

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