Development of a Nanostructural Microwave Probe Based on GaAs

Y. Ju,T. Kobayashi,H. Soyama
DOI: https://doi.org/10.1007/s00542-007-0484-0
2008-01-01
Abstract:In order to develop a new structural microwave probe, we studied the fabrication of an AFM probe on a GaAs wafer. A waveguide was introduced by evaporating Au film on the top and bottom surfaces of the GaAs AFM probe where a tip 7 μm high with a 2.0 aspect ratio was formed and the dimensions of the cantilever were 250 × 30 × 15 μm. The open structure of the waveguide at the tip of the probe was obtained by FIB fabrication. An AFM image and profile analysis for a standard sample, obtained by the fabricated GaAs microwave probe and a commercial Si AFM probe, indicate that the fabricated probe has a similar capability for measurement of material topography as compared to the commercial probe.
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