Abstract:With the technology nodes keep advancing, the application of TSV(Through Silicon Via) technology in 3D integration is faced with more challenges. The shift from via-last to via-middle fabrication scheme, the ever-increasing density of TSV, the reduction in supply voltage and the increase in frequency of on-chip local clock, all pose threat to signal/power integrity of the TSV system. In this paper, the noise coupling effect between TSVs and corresponding suppression methods were modeled and analyzed. Effect of variations of structural parameters on noise coupling are investigated and results are explained based on specifications of advanced technology node. In order to alleviate noise effect under fine pitch scenario, different noise suppression methods are discussed and compared. The guard-ring didn't demonstrate much noise reduction over the whole frequency spectrum, with slightly better performance within the low frequency range. The buried oxide layer of SOI technology also showed little suppression effect in blocking substrate noise. However, the TSV array scheme is significantly effective in noise suppression over the whole frequency spectrum.

Mitigating TSV-induced substrate noise coupling in 3-D IC using buried interface contacts

Characterization of Tsv-Induced Loss and Substrate Noise Coupling in Advanced Three-Dimensional Cmos Soi Technology

A simple approach to modeling substrate coupling in mixed-signal integrated circuits by TCAD

Frequency- and temperature-dependent modeling of coaxial through-silicon vias for 3-D ICs

A Rigorous Model for Through-Silicon Vias with Ohmic Contact in Silicon Interposer

Crosstalk Reduction in TSV Arrays with Direct Ohmic Contact Between Metal and Silicon-Substrate

Sensitivity analysis of through-silicon via (TSV) interconnects for 3-D ICs

Modeling and analysis of TSV noise coupling and suppression methods for 20nm node and beyond

Noise Coupling Between Through-Silicon Vias and Active Devices for 20/14-Nm Technology Nodes

Electrothermal modeling of coaxial through silicon via (TSV) for three-dimensional ICs

Electrical Modeling of Three-Dimensional Carbon-Based Heterogeneous Interconnects

3d Hybrid Modeling Of Substrate Coupling Noise In Lightly Doped Mixed-Signal Ics

Modeling Of Substrate Coupling Noise In Lightly Doped Mixed-Signal Ics

Modeling and Optimization of Substrate Electromagnetic Coupling and Isolation in Modern Lightly Doped CMOS Substrate

Numerical Laplace Inversion Method for Through-Silicon Via (TSV) Noise Coupling in 3D-IC Design

PDN Impedance Modeling for Multiple Through Vias Array in Doped Silicon

A Shielding Structure for Crosstalk Reduction in Silicon Interposer

Characteristics of Coupling Capacitance Between Signal-Ground TSVs Considering MOS Effect in Silicon Interposers

Capacitive coupling analysis of TSV array in 3D packaging

Study on the Noise Coupling and Shielding Between Through Silicon Vias

Substrate Noise Coupling in Mixed-signal Integrated Circuits