Abstract:Through-silicon-vias (TSVs) can potentially be used to implement inductors in 3-D integrated systems for minimal footprint and large inductance. However, different from conventional 2-D spiral inductors, TSV inductors are fully buried in the lossy substrate, thus suffering from low quality factors. In this paper, we systematically examine how various process and design parameters affect their performance. A few interesting phenomena that are unique to TSV inductors are observed. We then propose a novel shield mechanism utilizing the microchannel, a technique conventionally used for heat removal, to reduce the substrate loss. The technique increases the quality factor and inductance of the TSV inductor by up to and , respectively. Finally, since full-wave simulations of 3-D structures are time-consuming, we develop a set of compressed sensing-based design strategies for microchannel-shielded TSV inductors, which only requires a minimal number of simulations. It enables us to implement microchannel-shielded TSV inductors of up to reduced area compared with spiral inductors of the same design specs (quality factor, inductance, and frequency). To the best of our knowledge, this is the very first in-depth study on TSV inductors to make them practical for high-frequency applications. We hope our study shall point out a new and exciting research direction for 3-D integrated circuit designers.

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Genetic Algorithms and Particle Swarm Optimization Mechanisms for Through-Silicon Via (TSV) Noise Coupling

Signal Integrity Analysis of Through-Silicon Via Based 3D Integrated Circuit

Different designs of TSVs for 3D IC: Signal integrity analysis with cascaded scattering matrix

Power Integrity Analysis of TSV Based 3-D Integrated Circuits

Capacitive coupling analysis of TSV array in 3D packaging

PDN Impedance Modeling for Multiple Through Vias Array in Doped Silicon

Electrical-Thermal Co-Simulation For Through Silicon Via And Active Tier In 3-D Ic

Compact Wideband Equivalent-Circuit Model for Electrical Modeling of Through-Silicon Via

Characterization of Tsv-Induced Loss and Substrate Noise Coupling in Advanced Three-Dimensional Cmos Soi Technology

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System-Level Analysis of 3D ICs with Thermal TSVs

Noise Coupling Between Through-Silicon Vias and Active Devices for 20/14-Nm Technology Nodes

Modeling and Analysis of Signal Transmission with Through Silicon Via (TSV) Noise Coupling