Abstract:Through-silicon-vias (TSVs) can potentially be used to implement inductors in 3-D integrated systems for minimal footprint and large inductance. However, different from conventional 2-D spiral inductors, TSV inductors are fully buried in the lossy substrate, thus suffering from low quality factors. In this paper, we systematically examine how various process and design parameters affect their performance. A few interesting phenomena that are unique to TSV inductors are observed. We then propose a novel shield mechanism utilizing the microchannel, a technique conventionally used for heat removal, to reduce the substrate loss. The technique increases the quality factor and inductance of the TSV inductor by up to and , respectively. Finally, since full-wave simulations of 3-D structures are time-consuming, we develop a set of compressed sensing-based design strategies for microchannel-shielded TSV inductors, which only requires a minimal number of simulations. It enables us to implement microchannel-shielded TSV inductors of up to reduced area compared with spiral inductors of the same design specs (quality factor, inductance, and frequency). To the best of our knowledge, this is the very first in-depth study on TSV inductors to make them practical for high-frequency applications. We hope our study shall point out a new and exciting research direction for 3-D integrated circuit designers.

Study on the Noise Coupling and Shielding Between Through Silicon Vias

Noise Coupling Between Through-Silicon Vias and Active Devices for 20/14-Nm Technology Nodes

Frequency- and temperature-dependent modeling of coaxial through-silicon vias for 3-D ICs

Sensitivity analysis of through-silicon via (TSV) interconnects for 3-D ICs

Electrical Characterization of Through-Silicon Vias (TSV) with Different Physical Configurations

Modeling and analysis of TSV noise coupling and suppression methods for 20nm node and beyond

Transmission Characteristics Of A Coaxial Through-Silicon Via (C-Tsv) Interconnect

On the Efficacy of Through-Silicon-Via Inductors

Electromagnetic Compatibility-Oriented Study on Through Silicon Single-Walled Carbon Nanotube Bundle Via (TS-SWCNTBV) Arrays

Different designs of TSVs for 3D IC: Signal integrity analysis with cascaded scattering matrix

Electrothermal modelling of through silicon via (TSV) interconnects

Electromagnetic Noise Coupling Analysis of TSV Array by Using Cylindrical Mode Expansion Method

Crosstalk Reduction in TSV Arrays with Direct Ohmic Contact Between Metal and Silicon-Substrate

Impact of Technology Scaling on Electrical Characteristics of Through-Silicon Via Correlated with Equivalent Circuits

Power Integrity Analysis of TSV Based 3-D Integrated Circuits

Research on Crosstalk Issue of Through Silicon Via for 3d Integration

A Rigorous Model for Through-Silicon Vias with Ohmic Contact in Silicon Interposer

3D Modeling and Finite-Element Full-Wave Simulation of TSV for Stack Up SIP Integration Applications

Analysis of Multiple Vias Coupling in Silicon Interposer by Using Cylindrical Mode Expansion Method

Capacitive coupling analysis of TSV array in 3D packaging

Novel through-silicon vias for enhanced signal integrity in 3D integrated systems