Abstract:The modeling and simulation of via's effect on the data transferring or high frequency signal path and device performance have been one of the major concerns in the designing and testing of multilayered electric interconnects in applications like highly integrated system-in-package (SIP) and high-speed circuitry design. The authors of this paper explore the 3D full-wave modeling of through Si vias (TSV) in multilayered SIP and simulate their effects on spectral performance and signal integrity with the help of finite element methodologies. The emphasis of the research is on the revealing of 3D electromagnetic field distribution on fundamental single and differential TSV interlayer interconnects, so that more detailed parasitic effects may be found and equivalent model closer to the reality can be obtained, compared with the methodology based on purely circuit analysis. And the effect of the variations in the TSV diameter and height and the effect of grounded TSV are revealed. Additionally, S21 performance and field distribution of two sort of paired vias are displayed. Waveports are adopted for the full-wave modeling and all the cases are in 0~10GHz range.

Modeling and analysis of TSV noise coupling and suppression methods for 20nm node and beyond

Noise Coupling Between Through-Silicon Vias and Active Devices for 20/14-Nm Technology Nodes

Frequency- and temperature-dependent modeling of coaxial through-silicon vias for 3-D ICs

Sensitivity analysis of through-silicon via (TSV) interconnects for 3-D ICs

Study on the Noise Coupling and Shielding Between Through Silicon Vias

A simple approach to modeling substrate coupling in mixed-signal integrated circuits by TCAD

Crosstalk Reduction in TSV Arrays with Direct Ohmic Contact Between Metal and Silicon-Substrate

Different designs of TSVs for 3D IC: Signal integrity analysis with cascaded scattering matrix

A Rigorous Model for Through-Silicon Vias with Ohmic Contact in Silicon Interposer

Modeling of a Pair of Annular Through Silicon Vias (TSV)

Transmission Characteristics Of A Coaxial Through-Silicon Via (C-Tsv) Interconnect

Modeling of Power Distribution Network Based on Multi-Walled Carbon Nanotube TSVs for 3-D ICs

Impact of Technology Scaling on Electrical Characteristics of Through-Silicon Via Correlated with Equivalent Circuits

Characteristics of Coupling Capacitance Between Signal-Ground TSVs Considering MOS Effect in Silicon Interposers

3D Modeling and Finite-Element Full-Wave Simulation of TSV for Stack Up SIP Integration Applications

Power Integrity Analysis of TSV Based 3-D Integrated Circuits

Modeling and Electromagnetic Analysis of Multilayer Through Silicon Via Interconnect for 3D Integration

Electromagnetic Noise Coupling Analysis of TSV Array by Using Cylindrical Mode Expansion Method

Electrical modeling, simulation and SPICE model extraction of TSVs in silicon interposer

Modeling and Application of Multi-Port TSV Networks in 3-D IC

Analysis of Multiple Vias Coupling in Silicon Interposer by Using Cylindrical Mode Expansion Method