Electrostatic Discharge Protection Framework for Mixed-Signal High Voltage CMOS Applications

Javier A. Salcedo,Haiyang Zhu,Alan W. Righter,Jean-Jacques Hajjar
DOI: https://doi.org/10.1109/icsict.2008.4734538
2008-01-01
Abstract:Electrostatic discharge (ESD) protection requirements for high voltage (HV) MOS technology are continuously evolving and increasingly stringent. To address the ever changing technology ESD constraints, a method for design, characterization, and integration of reliable mixed-signal HV MOS ESD solutions is introduced in this study. The dynamic response, design trade-offs and ESD verification in two HV CMOS-based technologies are discussed and depicted via fast transient and quasi-static measurements in the ESD-time domain.
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