Concept and extraction method of ESD-critical parameters for function-based layout-level ESD protection circuit design verification

Zhan, R.Y.,Feng, H.G.,Wu, Q.,Guan, X.K.
DOI: https://doi.org/10.1145/1015090.1015282
2004-01-01
Abstract:On-chip ESD (electrostatic discharging) protection is a challenging IC design problem New CAD tools are essential to ESD protection design prediction and verification at full chip level. This paper reports a novel concept and extraction method of ESD-critical parameters for function-based layout-level ESD protection circuit design verification, which has been used to develop the first intelligent CAD tool of such kind. Design examples in 0.35μm BiCMOS are presented.
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