Structural and Optical Properties of 6h–sic Helium-Implanted at 600 K

H. H. Zhang,C. H. Zhang,B. S. Li,L. H. Han,Y. Zhang

DOI: https://doi.org/10.1016/j.nimb.2010.04.012

IF: 1.279

2010-01-01

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms

Abstract:Single crystals of 6H–SiC were implanted at 600K with 100keV He ions to three successively fluences and subsequently annealed at different temperatures ranging from 873 to 1473K in vacuum. The recovery of lattice damage was investigated by different techniques including Rutherford backscattering spectrometry in channeling geometry, Raman spectroscopy and Fourier transform infrared spectroscopy. All three techniques showed that the damage induced by helium ion implantation in the lattice is closely related to the fluence. Rutherford backscattering spectrometry/channeling data on high temperature implantations suggest that for a fluence of 3×1016 He+/cm2, extended defects are created by thermal annealing to 1473K. Apart from a well-known intensity decrease of scattering peaks in Raman spectroscopy it was found that the absorbance peak in Fourier transform infrared spectroscopy due to the stretching vibration of Si–C bond shifted to smaller wave numbers with increasing fluence, shifting back to larger wave numbers with increasing annealing temperature. These phenomena are attributed to different lattice damage behavior induced by the hot implantation process, in which simultaneous recovery was prevailing.