Abstract:As a wide bandgap semiconductor material, silicon carbide has promising prospects for application. However, its commercial production size is currently 6 inches, and the difficulty in preparing larger single crystals increases exponentially with size increasing. Large-size single crystal growth is faced with the enormous problem of radial growth conditions deteriorating. Based on simulation tools, the physical field of 8-inch crystal growth is modeled and studied. By introducing the design of the seed cavity, the radial temperature difference in the seed crystal surface is reduced by 88% from 93 K of a basic scheme to 11 K, and the thermal field conditions with uniform radial temperature and moderate temperature gradient are obtained. Meanwhile, the effects of different processing conditions and relative positions of key structures on the surface temperature and axial temperature gradients of the seed crystals are analyzed in terms of new thermal field design, including induction power, frequency, diameter and height of coils, the distance between raw materials and the seed crystal. Meanwhiles, better process conditions and relative positions under experimental conditions are obtained. Based on the optimized conditions, the thermal field verification under seedless conditions is carried out, discovering that the single crystal deposition rate is 90% of that of polycrystalline deposition under the experimental conditions. Meanwhile, an 8-inch polycrystalline with 9.6 mm uniform deposition was successfully obtained after 120 h crystal growth, whose convexity is reduced from 13 mm to 6.4 mm compared with the original scheme. The results indicate that the optimized conditions can be used for single-crystal growth.

Growth and Defect Characterization of 6H-SiC Single Crystal Seeded (1015) Plane

EPITAXIAL GROWTH OF (0001)ORIENTED 6H-Sic FILMS ON Si(111) SUBSTRATE BY ORGANIC SOL-GEL FILM ANNEALING

Improvement of surface morphology by optimizing the growth conditions in solution growth of SiC single crystal

Growth and Surface Morphologies of 6H SiC Bulk and Epitaxial Crystals

Pvt Growth of 6h Sic Crystals and Defect Characterization

Glutatmine synthetase activity in the chick brain during postnatal growth. Effect of MSO.

Bulk growth of high-purity 6H-SiC single crystals by halide chemical-vapor deposition

Characterization of a Czochralski Grown Silicon Crystal Doped with 1020 Cm‐3 Germanium

Evolution of 2-inch AlN Single Crystal Grown on SiC Seed via PVT method

Design and Optimization of Thermal Field for PVT Method 8-Inch SiC Crystal Growth

Dislocation proliferation at the growth crystal/seed interface of physical vapor transport-grown 4H-SiC crystals

Physical-Vapor-Transport growth of 4H silicon carbide single crystals by a tiling method

Role of the Growth Facet on the Generation and Expansion of Stacking Faults in PVT-Grown N-Type 4H-Sic Single-Crystal Boules

Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates Without Foreign Catalysts

Bulk AlN crystal growth: self-seeding and seeding on 6H-SiC substrates

Effect of Subsurface Damages in Seed Crystals on the Crystal Quality of 4H-Sic Single Crystals Grown by the PVT Technology

Growth and Mechanical Properties of Amorphous and Nanostructured SiC films

Limitations during Vapor Phase Growth of Bulk (100) 3C-SiC Using 3C-SiC-on-SiC Seeding Stacks

Development of High Quality 8 Inch 4H-SiC Substrates

Diameter enlargement of SiC bulk single crystals based on simulation and experiment

Growth and Characterization of Si-doped GaAs Crystals for LED Application